发明授权
- 专利标题: Apparatus to control the amount of oxygen incorporated into polycrystalline silicon film during excimer laser processing of silicon films
- 专利标题(中): 用于在硅膜的准分子激光加工期间控制掺入多晶硅膜中的氧的量的装置
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申请号: US09653484申请日: 2000-08-31
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公开(公告)号: US06580053B1公开(公告)日: 2003-06-17
- 发明人: Apostolos Voutsas
- 申请人: Apostolos Voutsas
- 主分类号: B23K2600
- IPC分类号: B23K2600
摘要:
The invention provides an apparatus for reducing, or eliminating, ambient air in connection with an excimer laser annealing process. Nozzles are provided to direct a flow of gas, preferably helium, neon, argon or nitrogen, at a region overlying the target area of an amorphous silicon layer deposited on an LCD substrate. The nozzles direct a flow of gas at sufficient pressure and flow rate to remove ambient air from the region overlying the target area. With the ambient air, especially oxygen, removed, the laser can anneal the amorphous silicon to produce polycrystalline silicon with less oxygen contamination. In a preferred embodiment, an exhaust system is also provided to remove the gas.
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