发明授权
- 专利标题： Organosilicon precursors for interlayer dielectric films with low dielectric constants
- 专利标题（中）： 具有低介电常数的层间绝缘膜的有机硅前体
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申请号： US09944042申请日： 2001-08-31
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公开(公告)号： US06583048B2公开(公告)日： 2003-06-24
- 发明人: Jean Louise Vincent , Mark Leonard O'Neill , Howard Paul Withers, Jr. , Scott Edward Beck , Raymond Nicholas Vrtis
- 申请人： Jean Louise Vincent , Mark Leonard O'Neill , Howard Paul Withers, Jr. , Scott Edward Beck , Raymond Nicholas Vrtis
- 主分类号： H01L214763
- IPC分类号： H01L214763
摘要：
A method of forming a low dielectric constant interlayer dielectric film on a substrate by reacting, under chemical vapor deposition conditions sufficient to deposit the film on the substrate, an organosilicon precursor comprising a silyl ether, a silyl ether oligomer, or an organosilicon compound containing one or more reactive groups, to form an interlayer dielectric film having a dielectric constant of 3.5 or less. The films formed by the above method.