发明授权
- 专利标题： Isolation of alpha silicon diode sensors through ion implantation
- 专利标题（中）： 通过离子注入隔离α硅二极管传感器
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申请号： US09290443申请日： 1999-04-13
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公开(公告)号： US06586812B1公开(公告)日： 2003-07-01
- 发明人: Min Cao , Jeremy A. Theil , Gary W. Ray , Dietrich W. Vook
- 申请人： Min Cao , Jeremy A. Theil , Gary W. Ray , Dietrich W. Vook
- 主分类号： H01L3120
- IPC分类号： H01L3120
摘要：
An array of image sensors that includes ion implantation regions that provide physical isolation between the pixel electrode regions. The physical isolation reduces coupling and cross-talk between the image sensors. The array of isolated image sensors can be formed by a simple fabrication process.
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