• 专利标题: Method for fabricating a wave division laser array multiplexer
  • 申请号: US09781103
    申请日: 2001-02-08
  • 公开(公告)号: US06590916B2
    公开(公告)日: 2003-07-08
  • 发明人: Richard C. Eden
  • 申请人: Richard C. Eden
  • 主分类号: H01S300
  • IPC分类号: H01S300
Method for fabricating a wave division laser array multiplexer
摘要:
An IC laser array package is provided wherein standard CMOS integrated circuit (IC) processes are used for fabricating the controller for the laser array and wherein p-channel MOSFET devices are used as switches with the controller which short the anode of the selected laser in the array (connected to the drain of the p-channel MOSFET switches) to ground. In this structure, the modulating signal from the driver input can be applied to the common cathode substrate of the laser array bar in a standard package, along with a negative dc bias current provided from the negative voltage dc bias package pin through an inductor, in the same built-in bias tee manner previously used with a standard single-laser 14-pin package. Because the p-channel MOSFETs are used only as switches, their ft values are typically not a material hindrance to the circuit operation.
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