发明授权
- 专利标题: Method for stabilizing high pressure oxidation of a semiconductor device
- 专利标题(中): 稳定半导体器件的高压氧化的方法
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申请号: US10212892申请日: 2002-08-05
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公开(公告)号: US06596651B2公开(公告)日: 2003-07-22
- 发明人: F. Daniel Gealy , Scott DeBoer , Dave Chapek , Husam N. Al-Shareef , Randhir Thakur
- 申请人: F. Daniel Gealy , Scott DeBoer , Dave Chapek , Husam N. Al-Shareef , Randhir Thakur
- 主分类号: H01L2131
- IPC分类号: H01L2131
摘要:
A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmospheres and 25 atmospheres N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.
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