Method and apparatus for stabilizing high pressure oxidation of a semiconductor device
    1.
    发明授权
    Method and apparatus for stabilizing high pressure oxidation of a semiconductor device 有权
    用于稳定半导体器件的高压氧化的方法和装置

    公开(公告)号:US06291364B1

    公开(公告)日:2001-09-18

    申请号:US09386941

    申请日:1999-08-31

    IPC分类号: H01L2631

    摘要: A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmosphere to 25 atmosphere N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

    摘要翻译: 公开了一种在高压氧化炉内高压氧化阶段防止N2O变得超临界的方法和装置。 该方法和装置利用催化剂在进入高压氧化炉时催化分解N2O。 该催化剂用于5气压至25气氛N2O和600至750℃温度范围的环境中,这是导致N2O超临界的条件。 通过防止N2O变得超临界,可以控制反应,防止温度和压力尖峰。 催化剂可以选自贵金属过渡金属及其氧化物。 该组可以包括钯,铂,铱,铑,镍,银和金。

    Method for stabilizing high pressure oxidation of a semiconductor device
    2.
    发明授权
    Method for stabilizing high pressure oxidation of a semiconductor device 有权
    稳定半导体器件的高压氧化的方法

    公开(公告)号:US06596651B2

    公开(公告)日:2003-07-22

    申请号:US10212892

    申请日:2002-08-05

    IPC分类号: H01L2131

    摘要: A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmospheres and 25 atmospheres N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

    摘要翻译: 公开了一种在高压氧化炉内高压氧化阶段防止N2O变得超临界的方法和装置。 该方法和装置利用催化剂在进入高压氧化炉时催化分解N2O。 该催化剂用于五个大气压和25个大气压N 2 O之间的环境中,并且温度范围为600℃至750℃,这是导致N 2 O变得超临界的条件。 通过防止N2O变得超临界,可以控制反应,防止温度和压力尖峰。 催化剂可以选自贵金属过渡金属及其氧化物。 该组可以包括钯,铂,铱,铑,镍,银和金。

    Apparatus for stabilizing high pressure oxidation of a semiconductor device

    公开(公告)号:US06827790B2

    公开(公告)日:2004-12-07

    申请号:US09798445

    申请日:2001-03-02

    IPC分类号: C23C1600

    摘要: a method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five (5) atmospheres to twenty-five (25) atmospheres N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, rhodium, nickel, silver, and gold.

    Method for stabilizing high pressure oxidation of a semiconductor device
    5.
    发明授权
    Method for stabilizing high pressure oxidation of a semiconductor device 失效
    稳定半导体器件的高压氧化的方法

    公开(公告)号:US07410911B2

    公开(公告)日:2008-08-12

    申请号:US11251973

    申请日:2005-10-17

    IPC分类号: H01L21/324

    摘要: A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmospheres and 25 atmospheres N2O and a temperature range of 600° C. to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

    摘要翻译: 公开了一种在高压氧化炉内的高压氧化阶段防止N 2 O变得超临界的方法和装置。 该方法和装置利用催化剂在进入高压氧化炉时催化分解N 2 O 2。 该催化剂在五个大气压和25个大气压N 2 O 2的温度范围和600℃至750℃的温度范围内使用,这是导致N 2 O超级关键。 通过防止N 2 O 2变得超临界,控制反应以防止温度和压力尖峰。 催化剂可以选自贵金属过渡金属及其氧化物。 该组可以包括钯,铂,铱,铑,镍,银和金。

    Apparatus for stabilizing high pressure oxidation of a semiconductor device
    6.
    发明授权
    Apparatus for stabilizing high pressure oxidation of a semiconductor device 有权
    用于稳定半导体器件的高压氧化的装置

    公开(公告)号:US07282457B2

    公开(公告)日:2007-10-16

    申请号:US09798445

    申请日:2001-03-02

    IPC分类号: H01L21/31 H01L21/469

    摘要: A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace is disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmosphere to 25 atmosphere N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

    摘要翻译: 公开了一种在高压氧化炉内的高压氧化阶段防止N 2 O变得超临界的方法和装置。 该方法和装置利用催化剂在进入高压氧化炉时催化分解N 2 O 2。 该催化剂用于5个气氛至25个气氛N 2 O 2和600℃至750℃的温度范围的环境中,这是导致N 2 O超级关键。 通过防止N 2 O 2变得超临界,控制反应以防止温度和压力尖峰。 催化剂可以选自贵金属过渡金属及其氧化物。 该组可以包括钯,铂,铱,铑,镍,银和金。

    Apparatus for stabilizing high pressure oxidation of a semiconductor device
    7.
    发明授权
    Apparatus for stabilizing high pressure oxidation of a semiconductor device 有权
    用于稳定半导体器件的高压氧化的装置

    公开(公告)号:US07279435B2

    公开(公告)日:2007-10-09

    申请号:US10933890

    申请日:2004-09-02

    IPC分类号: H01L21/469 H01L21/42

    摘要: A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five (5) atmospheres to twenty-five (25) atmospheres N2O and a temperature range of 600° C. to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

    摘要翻译: 公开了一种在高压氧化炉内的高压氧化阶段防止N 2 O变得超临界的方法和装置。 该方法和装置利用催化剂在进入高压氧化炉时催化分解N 2 O 2。 该催化剂用于五(5)大气压至二十五(25)个大气压N 2 O的环境和600℃至750℃的温度范围内,这是 导致N< 2> O超越关键的条件。 通过防止N 2 O 2变得超临界,控制反应以防止温度和压力尖峰。 催化剂可以选自贵金属过渡金属及其氧化物。 该组可以包括钯,铂,铱,铑,镍,银和金。

    Double layer electrode and barrier system on hemispherical grain silicon for use with high dielectric constant materials and methods for fabricating the same
    9.
    发明授权
    Double layer electrode and barrier system on hemispherical grain silicon for use with high dielectric constant materials and methods for fabricating the same 有权
    用于高介电常数材料的半球形晶粒硅上的双层电极和屏障系统及其制造方法

    公开(公告)号:US06399459B2

    公开(公告)日:2002-06-04

    申请号:US09892594

    申请日:2001-06-27

    IPC分类号: H01L2120

    摘要: A high surface area capacitor comprising a double metal layer (an electrode metal and barrier material) deposited on hemispherical grain (HSG) silicon, wherein a high dielectric constant (HDC) material is deposited over the double metal layer. The high surface area capacitor is complete with an upper cell plate electrode deposited over the HDC material. The double metal layer preferably comprises one noble metal, such as platinum or palladium, for the electrode metal and an oxidizable metal, such as ruthenium, iridium, or molybdenum, for the barrier material. The noble metal, such as platinum metal, alone would normally allow oxygen to diffuse into and oxidize any adhesion layer (making the adhesion layer less conductive) and/or undesirably oxidize any silicon-containing material during the deposition of the HDC material. Thus, the barrier metal is used to form a conducting oxide layer or a conducting layer which stops the oxygen diffusion. The HSG polysilicon provides an enhanced surface roughness that boosts cell capacitance. The HDC material, preferably BST or the like, is also used to boost cell capacitance.

    摘要翻译: 包括沉积在半球形晶粒(HSG)硅上的双金属层(电极金属和阻挡材料)的高表面积电容器,其中在双金属层上沉积高介电常数(HDC)材料。 高表面积电容器完成了沉积在HDC材料上的上电池板电极。 双金属层优选包含用于电极金属的一种贵金属,例如铂或钯,以及用于阻挡材料的可氧化金属,例如钌,铱或钼。 单独的贵金属,例如铂金属,通常会允许氧气在HDC材料的沉积过程中扩散并氧化任何粘附层(使粘合层导电性差)和/或不期望地氧化任何含硅材料。 因此,阻挡金属用于形成阻止氧扩散的导电氧化物层或导电层。 HSG多晶硅提供增强的表面粗糙度,提高电池电容。 HDC材料,优选BST等,也用于提高电池电容。

    Double layer electrode and barrier system on hemispherical grain silicon for use with high dielectric constant materials and methods for fabricating the same
    10.
    发明授权
    Double layer electrode and barrier system on hemispherical grain silicon for use with high dielectric constant materials and methods for fabricating the same 有权
    用于高介电常数材料的半球形晶粒硅上的双层电极和屏障系统及其制造方法

    公开(公告)号:US06673689B2

    公开(公告)日:2004-01-06

    申请号:US10159892

    申请日:2002-05-30

    IPC分类号: H01L2100

    摘要: A high surface area capacitor comprising a double metal layer of an electrode metal and a barrier material deposited on hemispherical grain (HSG) silicon and a high dielectric constant (HDC) material deposited over the double metal layer. An upper cell plate electrode is deposited over the HDC material. The double metal layer preferably comprises one noble metal for the electrode metal and an oxidizable metal for the barrier material. The noble metal alone would normally allow oxygen to diffuse into and oxidize any adhesion layer and/or undesirably oxidize any silicon-containing material during the deposition of the HDC material. The barrier metal is used to form a conducting oxide layer or a conducting layer which stops the oxygen diffusion. The HSG polysilicon provides a surface roughness that boosts cell capacitance. The HDC material is also used to boost cell capacitance.

    摘要翻译: 一种高表面电容器,包括电极金属的双金属层和沉积在双金属层上沉积的半球形晶粒(HSG)硅和高介电常数(HDC))材料上的阻挡材料。 在HDC材料上沉积上电池板电极。 双金属层优选包含用于电极金属的一种贵金属和用于阻挡材料的可氧化金属。 单独的贵金属通常将允许氧气在HDC材料的沉积期间扩散进入并氧化任何粘附层和/或不期望地氧化任何含硅材料。 阻挡金属用于形成导电氧化物层或阻止氧扩散的导电层。 HSG多晶硅提供了提高电池电容的表面粗糙度。 HDC材料也用于提高电池电容。