发明授权
- 专利标题： Method of preparing buried LOCOS collar in trench DRAMS
- 专利标题（中）： 在沟槽DRAMS中制备掩埋LOCOS环的方法
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申请号： US09910771申请日： 2001-07-24
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公开(公告)号： US06599798B2公开(公告)日： 2003-07-29
- 发明人: Helmut Tews , Stephan Kudelka , Uwe Schroeder , Rolf Weis
- 申请人： Helmut Tews , Stephan Kudelka , Uwe Schroeder , Rolf Weis
- 主分类号： H01L218242
- IPC分类号： H01L218242
摘要：
The vertical DRAM capacitor with a buried LOCOS collar characterized by: a self-aligned bottle and gas phase doping; no consumption of silicon at the depth of the buried strap; no reduction of trench diameter; and a nitride layer to protect trench sidewalls during gas phase doping.
公开/授权文献
- US20030020110A1 METHOD OF PREPARING BURIED LOCOS COLLAR IN TRENCH DRAMS 公开/授权日：2003-01-30