Method of reducing water spotting and oxide growth on a semiconductor structure

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US06601595B2 Method of reducing water spotting and oxide growth on a semiconductor structure 失效

Title translation: 减少半导体结构上的水斑和氧化物生长的系统

Patent Title: Method of reducing water spotting and oxide growth on a semiconductor structure
Patent Title (中): 减少半导体结构上的水斑和氧化物生长的系统
Application No.: US10231730

Application Date: 2002-08-28
Publication No.: US06601595B2

Publication Date: 2003-08-05
Inventor: Donald L. Yates
Applicant: Donald L. Yates
Main IPC: B08B304
IPC: B08B304

Abstract:

The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel.

Abstract(Chinese):

本发明涉及一种在改进的常规气体蚀刻/漂洗或干燥容器中清洗和干燥半导体结构的方法。

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