Invention Grant
- Patent Title: Titanium dioxide film co-doped with yttrium and erbium and method for producing the same
- Patent Title (中): 掺钇和铒的二氧化钛薄膜及其制造方法
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Application No.: US09833514Application Date: 2001-04-11
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Publication No.: US06602338B2Publication Date: 2003-08-05
- Inventor: San-Yuan Chen , Wen-Feng Hsieh , Chu-Chi Ting
- Applicant: San-Yuan Chen , Wen-Feng Hsieh , Chu-Chi Ting
- Priority: TW089119177 20000918
- Main IPC: C09K1167
- IPC: C09K1167

Abstract:
A precursor composition of TiO2 doped with erbium (Er) and yttrium (Y) for forming a film used in a planar optical waveguide amplifier. The precursor composition includes 100 mol % TiO2 precursor compound, about 0.1-10 mol % erbium ion (Er3+) precursor compound, and about 1-50 mol % yttrium ion (Y3+) precursor compound, thereby forming a doped TiO2 film co-doped with erbium and yttrium an amorphous structure to achieve the enhancing effect on photoluminescence properties.
Public/Granted literature
- US20020056831A1 Titanium dioxide film co-doped with yttrium and erbium and method for procucing the same Public/Granted day:2002-05-16
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