Abstract:
In the present invention, copper(I) selenide (Cu2-xSe) nanoparticles are fabricated by pyrolysis in an inert atmosphere. Uniformly dispersed Cu2-xSe particles are synthesized by altering Cu/Se ratio, the concentration of Se Precursors (TOP Se), reaction time and temperature. Analysis by inductively coupled plasma atomic emission spectroscopy (ICP-AES) of said Cu2-xSe nanoparticles reveals that the composition of the nanoparticles is Cu 1.95Se, wherein x=0.05. In addition, Cu2-xSe is dissolved in ethanol to deposit thin films by electrophoretical deposition (EPD) in an inert atmosphere, wherein a positive electrode and a negative electrode are employed. The positive electrode is made of stainless steel plate and the negative electrode is made of indium tin oxide on a glass substrate. Investigations on properties and surface morphology thereof in different electrophoretical conditions are carried out. The rate of EPD is found to significantly influence the quality of thin films.
Abstract:
In the present invention, copper(I) selenide (Cu2-xSe) nanoparticles are fabricated by pyrolysis in an inert atmosphere. Uniformly dispersed Cu2-xSe particles are synthesized by altering Cu/Se ratio, the concentration of Se Precursors (TOP Se), reaction time and temperature. Analysis by inductively coupled plasma atomic emission spectroscopy (ICP-AES) of said Cu2-xSe nanoparticles reveals that the composition of the nanoparticles is Cu 1.95Se, wherein x=0.05. In addition, Cu2-xSe is dissolved in ethanol to deposit thin films by electrophoretical deposition (EPD) in an inert atmosphere, wherein a positive electrode and a negative electrode are employed. The positive electrode is made of stainless steel plate and the negative electrode is made of indium tin oxide on a glass substrate. Investigations on properties and surface morphology thereof in different electrophoretical conditions are carried out. The rate of EPD is found to significantly influence the quality of thin films.
Abstract:
In a method of fabricating a planar light source, a first substrate is formed at first. First electrodes approximately parallel to each other are formed on the first substrate. Sets of first dielectric patterns are formed on the first substrate. Each set of the first dielectric patterns includes at least two first striped dielectric patterns, and each of the first striped dielectric patterns covers one of the first electrodes correspondingly. The edges of the top of each first striped dielectric pattern are raised in a peak shape. A phosphor layer is formed between the first striped dielectric patterns of each set of the first dielectric patterns. A second substrate is formed. The first and second substrates are bound; meanwhile, a discharge gas is injected into the discharge space.
Abstract:
The zinc oxide nanorod thin film in accordance with the present invention is highly condensed and has ideal photoelectric properties. The method for making the zinc oxide nanorod thin film has two steps: forming a zinc oxide seed layer comprising multiple crystals each having a grain size of 1-100 nm on a basal plate and preparing a zinc oxide nanorod thin film growing solution in which the zinc oxide seed layer is allowed to grow a zinc oxide crystal columnar layer at a growing temperature ranging from 50 to 100° C. for a growing time ranging from 0.5 to 10 hours to form a zinc oxide nanorod thin film, wherein the zinc oxide nanorod thin film growing solution is a 0.001-0.1 M aqueous zinc ion solution comprising hexamethylenetetramine.
Abstract:
A planar light source including a first substrate, a second substrate, a sealant, first electrodes, sets of first dielectric patterns, a phosphor layer, and a discharge gas is provided. The second substrate is disposed above the first substrate. The sealant is disposed between the first and second substrates to form a cavity among the first substrate, the second substrate, and the sealant. The first electrodes are disposed on the first substrate, and each set of the first dielectric patterns has at least two first striped dielectric patterns. Each of the first striped dielectric patterns covers one of the first electrodes correspondingly. The edges of the top of each first striped dielectric pattern are raised in a peak shape. The phosphor layer is disposed on the first substrate and between the first striped dielectric patterns of each set of the first dielectric patterns. The discharge gas is injected into the cavity.
Abstract:
A flat fluorescent lamp is provided. In the flat fluorescent lamp, a discharge gas and a fluorescent material are disposed inside a chamber; first and second electrodes covered by a dielectric layer are disposed at the bottom of the chamber; first protruding points are disposed on a first side of each electrode; and second protruding points are disposed on a second side of each electrode. In each electrode, the first and the second protruding points are alternately laid. The first light-emitting region formed between the first protruding points and the first and second electrodes corresponding thereto and the second light-emitting region formed between the second protruding points and the first and second electrodes corresponding thereto are one of the entirely not overlapping and partially overlapping. Further, a driving method for the flat fluorescent lamp and a liquid crystal display device having the flat fluorescent lamp are provided.
Abstract:
A planar light source is provided, and the planar light source includes a first plasma planar lamp and a second plasma planar lamp. The second plasma planar lamp is disposed on the first plasma planar lamp. The first and second plasma planar lamp have a plurality of bright regions and dark regions, respectively, wherein through allocating the bright regions and dark regions, the light emitted from the bright regions of the first plasma planar lamp is able to pass through the dark regions of the second plasma planar lamp. As mentioned above, the brightness of the planar light source can be improved.
Abstract:
A flat lamp panel includes a top substrate and a bottom substrate. The bottom substrate includes at least an electrode pair, a dielectric layer, and a first phosphor layer covering the up surface of the bottom substrate. The top substrate is disposed above the bottom substrate in a parallel manner. A first magnesium oxide layer and a second phosphor layer with patterns are disposed on the down surface of the top substrate, in which the down surface of the top substrate faces the up surface of the bottom substrate. Preferably, the flat lamp panel further includes a discharged space formed between the top substrate and the bottom substrate and a gas filled within the discharged space.
Abstract:
The zinc oxide nanorod thin film in accordance with the present invention is highly condensed and has ideal photoelectric properties. The method for making the zinc oxide nanorod thin film has two steps: forming a zinc oxide seed layer comprising multiple crystals each having a grain size of 1-100 nm on a basal plate and preparing a zinc oxide nanorod thin film growing solution in which the zinc oxide seed layer is allowed to grow a zinc oxide crystal columnar layer at a growing temperature ranging from 50 to 100° C. for a growing time ranging from 0.5 to 10 hours to form a zinc oxide nanorod thin film, wherein the zinc oxide nanorod thin film growing solution is a 0.001-0.1 M aqueous zinc ion solution comprising hexamethylenetetramine.
Abstract:
Microwave irradiation treatment is used to enhance the luminescent efficiency by improving surface morphology of the illuminating phosphors. The invention modifies the phosphor particles from the sheet-like shape into the spherical shape and so as to exhibit better crystalline property, thus it may provide for the fabrication of the phosphors with high luminescent efficiency for the optoelectronic devices.