发明授权
- 专利标题： Voltage withstanding structure for a semiconductor device
- 专利标题（中）： 用于半导体器件的耐压结构
-
申请号： US09494995申请日： 2000-01-31
-
公开(公告)号： US06603185B1公开(公告)日： 2003-08-05
- 发明人: Shinichi Jimbo , Jun Saito , Tomoyuki Yamazaki
- 申请人： Shinichi Jimbo , Jun Saito , Tomoyuki Yamazaki
- 优先权： JP11-023852 19990201; JP11-308516 19991029
- 主分类号： H01L2358
- IPC分类号： H01L2358
摘要：
A semiconductor device comprising: a semiconductor substrate, a dielectric film formed on the semiconductor substrate, a first electrode and a second electrode separated from each other on the dielectric film; a spiral thin film layer having both ends connected to the first electrode and the second electrode, respectively, the spiral thin film layer surrounding the first electrode, the thin film layer being formed on the dielectric layer, and a plurality of p-n diodes formed in series in the spiral thin film layer along a longitudinal direction of the spiral thin film layer.