发明授权
US06603191B2 Semiconductor device and method of manufacturing the same 有权
半导体装置及其制造方法

  • 专利标题: Semiconductor device and method of manufacturing the same
  • 专利标题(中): 半导体装置及其制造方法
  • 申请号: US09858230
    申请日: 2001-05-15
  • 公开(公告)号: US06603191B2
    公开(公告)日: 2003-08-05
  • 发明人: Takeshi WakabayashiOsamu Kuwabara
  • 申请人: Takeshi WakabayashiOsamu Kuwabara
  • 优先权: JP2000-146012 20000518; JP2000-147245 20000519
  • 主分类号: H01L23544
  • IPC分类号: H01L23544
Semiconductor device and method of manufacturing the same
摘要:
The back surface of a semiconductor wafer having a plurality of chip-forming regions each provided with a plurality of connection pads on the surface is bonded to a dicing tape, followed by fully cutting the semiconductor wafer along a cut line so as to form a cutting groove. Then, a front side protective film is formed on the front surface. The front side protective film has an open portion exposing the central portion of the connection pad, and is filled in the cutting groove. After formation of a columnar electrode connected to the connection pad via a wiring, a sealing film is formed on the front side protective film. Further, the cutting groove filled with the front side protective film is cut in substantially the center in the width direction, followed by peeling off the dicing tape so as to form individual semiconductor devices each forming a chip.
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