- 专利标题： Semiconductor memory device having redundancy system
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申请号： US10045780申请日： 2002-01-11
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公开(公告)号： US06603689B2公开(公告)日： 2003-08-05
- 发明人: Daisuke Kato , Yohji Watanabe
- 申请人： Daisuke Kato , Yohji Watanabe
- 优先权： JP2001-005562 20010112
- 主分类号： G11C700
- IPC分类号： G11C700
摘要：
A semiconductor memory device having a memory system and a redundancy system including redundant elements for repairing a plurality of defects in the memory system, comprising a plurality of address fuse sets each including address fuses for programming a defective address in the memory system, and a master fuse for preventing a corresponding redundant element from being selected when the redundant element is not used, wherein at least one master fuse is shared by at least two fuse sets among the plurality of address fuse sets.
公开/授权文献
- US20020093860A1 Semiconductor memory device having redundancy system 公开/授权日：2002-07-18
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