• Patent Title: Method of repairing a phase shifting mask
  • Application No.: US09726459
    Application Date: 2000-11-30
  • Publication No.: US06607674B2
    Publication Date: 2003-08-19
  • Inventor: Ching-Yu Chang
  • Applicant: Ching-Yu Chang
  • Priority: TW89118676A 20000913
  • Main IPC: B81B702
  • IPC: B81B702
Method of repairing a phase shifting mask
Abstract:
A phase shifting mask repair process is described. The process uses an etching gas or a hydrofluoric acid solution to etch the quartz substrate and the characteristics of the phase shifter layer being only slightly etched when clean with a NH3/H2O2/H2O2 solution to calculate and adjust the respective processing time accordingly. As a result, the phase difference between the quartz substrate and the MoSiON phase shifter layer stays relatively the same before and after the repair process.
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