Invention Grant
- Patent Title: Method of repairing a phase shifting mask
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Application No.: US09726459Application Date: 2000-11-30
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Publication No.: US06607674B2Publication Date: 2003-08-19
- Inventor: Ching-Yu Chang
- Applicant: Ching-Yu Chang
- Priority: TW89118676A 20000913
- Main IPC: B81B702
- IPC: B81B702

Abstract:
A phase shifting mask repair process is described. The process uses an etching gas or a hydrofluoric acid solution to etch the quartz substrate and the characteristics of the phase shifter layer being only slightly etched when clean with a NH3/H2O2/H2O2 solution to calculate and adjust the respective processing time accordingly. As a result, the phase difference between the quartz substrate and the MoSiON phase shifter layer stays relatively the same before and after the repair process.
Public/Granted literature
- US20020030034A1 Method of repairing a phase shifting mask Public/Granted day:2002-03-14
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