- 专利标题: n-type thiophene semiconductors
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申请号: US09915210申请日: 2001-07-24
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公开(公告)号: US06608323B2公开(公告)日: 2003-08-19
- 发明人: Tobin J. Marks , Antonio Facchetti , Henning Sirringhaus , Richard H. Friend
- 申请人: Tobin J. Marks , Antonio Facchetti , Henning Sirringhaus , Richard H. Friend
- 主分类号: H01L3524
- IPC分类号: H01L3524
摘要:
The new fluorocarbon-functionalized polythiophenes, in particular, &agr;,&ohgr;-diperfluorohexylsexithiophene DFH-6T (1) can be straightforwardly prepared in high yield and purified by gradient sublimation. Introduction of perfluorocarbon chains on the thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the fluorine-free analog 2. Evaporated films of 1, for example, behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities on the order of ˜0.01 cm2/Vs—some of the highest reported to date for n-type organic semiconductors.
公开/授权文献
- US20020053666A1 n-type thiophene semiconductors 公开/授权日:2002-05-09
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