发明授权
- 专利标题： Semiconductor device including capacitor with lower electrode including iridium and iridium oxide layers
- 专利标题（中）： 包括具有下电极的电容器的半导体器件包括铱和氧化铱层
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申请号： US09950804申请日： 2001-09-13
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公开(公告)号： US06608383B2公开(公告)日： 2003-08-19
- 发明人: Seiichi Yokoyama , Shun Mitarai , Masaya Nagata , Jun Kudo , Nobuhito Ogata , Yasuyuki Itoh
- 申请人： Seiichi Yokoyama , Shun Mitarai , Masaya Nagata , Jun Kudo , Nobuhito Ogata , Yasuyuki Itoh
- 优先权： JP9-354710 19971224; JP10-035639 19980218
- 主分类号： H01L2348
- IPC分类号： H01L2348
摘要：
A semiconductor memory device includes: a capacitor formed on a substrate and including a lower electrode, a dielectric film and an upper electrode; a selection transistor formed at the substrate; an electrically conductive plug for providing electrical connection between the selection transistor and the capacitor; and a diffusion barrier film provided between the electrically conductive plug and the lower electrode of the capacitor. The diffusion barrier film is a TaxSi1−xNy film or a HfxSi1−xNy film (where 0.2
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