公开(公告)号：US06313539B1

公开(公告)日：2001-11-06

申请号：US09219310

申请日：1998-12-23

申请人： Seiichi Yokoyama ,  Shun Mitarai ,  Masaya Nagata ,  Jun Kudo ,  Nobuhito Ogata ,  Yasuyuki Itoh

发明人： Seiichi Yokoyama ,  Shun Mitarai ,  Masaya Nagata ,  Jun Kudo ,  Nobuhito Ogata ,  Yasuyuki Itoh

IPC分类号： H01L2348

CPC分类号： H01L27/11502 ,  H01L21/31683 ,  H01L21/76841 ,  H01L21/76864 ,  H01L21/7687 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/75 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor memory device includes: a capacitor formed on a substrate and including a lower electrode, a dielectric film and an upper electrode; a selection transistor formed at the substrate; an electrically conductive plug for providing electrical connection between the selection transistor and the capacitor; and a diffusion barrier film provided between the electrically conductive plug and the lower electrode of the capacitor. The diffusion barrier film is a TaxSi1−xNy film or a HfxSi1−xNy film (where 0.2

摘要翻译： 半导体存储器件包括：形成在衬底上并包括下电极，电介质膜和上电极的电容器; 形成在所述基板上的选择晶体管; 用于在所述选择晶体管和所述电容器之间提供电连接的导电插头; 以及设置在电容器的导电插头和下电极之间的扩散阻挡膜。 扩散阻挡膜是TaxSi1-xNy膜或HfxSi1-xNy膜（其中0.2

公开(公告)号：US06608383B2

公开(公告)日：2003-08-19

申请号：US09950804

申请日：2001-09-13

申请人： Seiichi Yokoyama ,  Shun Mitarai ,  Masaya Nagata ,  Jun Kudo ,  Nobuhito Ogata ,  Yasuyuki Itoh

发明人： Seiichi Yokoyama ,  Shun Mitarai ,  Masaya Nagata ,  Jun Kudo ,  Nobuhito Ogata ,  Yasuyuki Itoh

IPC分类号： H01L2348

CPC分类号： H01L27/11502 ,  H01L21/31683 ,  H01L21/76841 ,  H01L21/76864 ,  H01L21/7687 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/75 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor memory device includes: a capacitor formed on a substrate and including a lower electrode, a dielectric film and an upper electrode; a selection transistor formed at the substrate; an electrically conductive plug for providing electrical connection between the selection transistor and the capacitor; and a diffusion barrier film provided between the electrically conductive plug and the lower electrode of the capacitor. The diffusion barrier film is a TaxSi1−xNy film or a HfxSi1−xNy film (where 0.2

摘要翻译： 半导体存储器件包括：形成在衬底上并包括下电极，电介质膜和上电极的电容器; 形成在所述基板上的选择晶体管; 用于在所述选择晶体管和所述电容器之间提供电连接的导电插头; 以及设置在电容器的导电插头和下电极之间的扩散阻挡膜。 扩散阻挡膜是TaxSi1-xNy膜或HfxSi1-xNy膜（其中0.2

公开(公告)号：US06180974B2

公开(公告)日：2001-01-30

申请号：US08986333

申请日：1997-12-05

申请人： Akira Okutoh ,  Masaya Nagata ,  Shun Mitarai ,  Yasuyuki Itoh

发明人： Akira Okutoh ,  Masaya Nagata ,  Shun Mitarai ,  Yasuyuki Itoh

IPC分类号： H01L27108

CPC分类号： H01L28/60 ,  H01L28/55

摘要： In a semiconductor storage device in a stack structure wherein a capacitor section having an upper electrode, a dielectric layer, and a lower electrode is connected with a transistor section by a plug, the lower electrode is formed in contact with the plug. The lower electrode is formed of at least an oxide of a platinum-rhodium alloy. In addition to the oxide of a platinum-rhodium alloy, platinum and/or a platinum-rhodium alloy can be used as materials for forming the lower electrode. The plug is formed of polysilicon or tungsten. When the plug is formed of polysilicon, the lower electrode is formed by sequentially laminating, for example, a film of the oxide of the platinum-rhodium alloy, a film of the platinum-rhodium alloy, and a film of the oxide of the platinum-rhodium alloy on the plug.

摘要翻译： 在具有上电极，电介质层和下电极的电容器部分通过插头与晶体管部分连接的堆叠结构的半导体存储器件中，下电极形成为与插头接触。 下电极由至少一种铂 - 铑合金的氧化物形成。 除了铂 - 铑合金的氧化物之外，可以使用铂和/或铂 - 铑合金作为形成下电极的材料。 插头由多晶硅或钨制成。 当插塞由多晶硅形成时，下电极通过依次层压例如铂 - 铑合金的氧化物的膜，铂 - 铑合金的膜和铂的氧化物的膜 - 铑合金在插头上。

公开(公告)号：US5776356A

公开(公告)日：1998-07-07

申请号：US388828

申请日：1995-02-15

申请人： Seiichi Yokoyama ,  Yasuyuki Itoh ,  Shigeo Onishi ,  Jun Kudo ,  Keizo Sakiyama ,  Hitoshi Urashima

发明人： Seiichi Yokoyama ,  Yasuyuki Itoh ,  Shigeo Onishi ,  Jun Kudo ,  Keizo Sakiyama ,  Hitoshi Urashima

IPC分类号： H01L21/02 ,  H01L21/311 ,  H01L21/3065

CPC分类号： H01L21/31122 ,  H01L28/55

摘要： A method for etching a ferroelectric film made of a compound containing lead of the present invention, includes the steps of: forming an insulating film, metal films, and a ferroelectric film on a substrate in this order; forming an etching resistant film on the ferroelectric film, followed by patterning; and etching the ferroelectric film with a mixed gas containing an inert gas and a halogen gas or a halogenated gas as an etching gas, using the patterned etching resistant film as an etching mask.

摘要翻译： 本发明的由含铅化合物构成的铁电体膜的蚀刻方法包括以下步骤：在基板上依次形成绝缘膜，金属膜和铁电体膜; 在强电介质膜上形成耐蚀刻膜，然后进行图案化; 并使用图案化抗蚀剂膜作为蚀刻掩模，用包含惰性气体和卤素气体或卤化气体的混合气体作为蚀刻气体来蚀刻铁电体膜。

公开(公告)号：US5965942A

公开(公告)日：1999-10-12

申请号：US851895

申请日：1997-05-06

申请人： Yasuyuki Itoh ,  Shigeo Onishi ,  Jun Kudo ,  Keizo Sakiyama

发明人： Yasuyuki Itoh ,  Shigeo Onishi ,  Jun Kudo ,  Keizo Sakiyama

IPC分类号： H01L21/02 ,  H01L21/768 ,  H01L27/108

CPC分类号： H01L21/7687 ,  H01L27/10808 ,  H01L28/60 ,  H01L28/55 ,  H01L28/75

摘要： In a semiconductor memory device, a tantalum silicon nitride film or hafnium silicon nitride film is provided, as a diffusion barrier layer, between a polysilicon plug which electrically connects a source/drain region to a lower platinum electrode of a capacitor, formed on a silicon substrate, and the lower platinum electrode.The tantalum silicon nitride film has a composition of Ta.sub.X Si.sub.1-X N.sub.Y wherein 0.75 .ltoreq.X.ltoreq.0.95 and 1.0 .ltoreq.Y.ltoreq.1.1.The hafnium silicon nitride film has a composition of Hf.sub.X Si.sub.1-X N.sub.Y wherein 0.2

摘要翻译： 在半导体存储器件中，在形成于硅上的电容器的源极/漏极区域与电容器的下部铂电极电连接的多晶硅插塞之间，设置有作为扩散阻挡层的氮化硅氮化硅膜或氮化铪膜 基板和下部铂电极。 钽硅氮化物膜具有TaXSi1-XNY的组成，其中0.75≤X≤0.95和1.0≤Y≤1.1。 氮化铪膜的组成为HfXSi1-XNY，其中0.2

公开(公告)号：US07112889B1

公开(公告)日：2006-09-26

申请号：US09577932

申请日：2000-05-25

申请人： Shigeyuki Maruyama ,  Yasuyuki Itoh ,  Tetsurou Honda ,  Kazuhiro Tashiro ,  Makoto Haseyama ,  Kenichi Nagashige ,  Yoshiyuki Yoneda ,  Hirohisa Matsuki

发明人： Shigeyuki Maruyama ,  Yasuyuki Itoh ,  Tetsurou Honda ,  Kazuhiro Tashiro ,  Makoto Haseyama ,  Kenichi Nagashige ,  Yoshiyuki Yoneda ,  Hirohisa Matsuki

IPC分类号： H01L23/544

CPC分类号： H01L22/12 ,  G01R31/2891 ,  H01L21/67282 ,  H01L21/6838 ,  H01L22/32 ,  H01L23/544 ,  H01L24/97 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/5448 ,  H01L2223/54493 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  Y10T29/49998 ,  Y10T279/11 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor device has an alignment mark which can be recognized by a conventional wafer prober. A redistribution layer connects electrodes of the semiconductor device to electrode pads located in predetermined positions of the redistribution layer. Metal posts configured to be provided with external connection electrodes are formed on the electrode pads of the redistribution layer. A mark member made of the same material as the metal posts is formed on the redistribution layer. The mark member serves as an alignment mark located in a predetermined positional relationship with the metal posts.

公开(公告)号：US08404496B2

公开(公告)日：2013-03-26

申请号：US11439119

申请日：2006-05-24

申请人： Shigeyuki Maruyama ,  Yasuyuki Itoh ,  Tetsurou Honda ,  Kazuhiro Tashiro ,  Makoto Haseyama ,  Kenichi Nagashige ,  Yoshiyuki Yoneda ,  Hirohisa Matsuki

发明人： Shigeyuki Maruyama ,  Yasuyuki Itoh ,  Tetsurou Honda ,  Kazuhiro Tashiro ,  Makoto Haseyama ,  Kenichi Nagashige ,  Yoshiyuki Yoneda ,  Hirohisa Matsuki

IPC分类号： G01R31/26

CPC分类号： H01L22/12 ,  G01R31/2891 ,  H01L21/67282 ,  H01L21/6838 ,  H01L22/32 ,  H01L23/544 ,  H01L24/97 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/5448 ,  H01L2223/54493 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  Y10T29/49998 ,  Y10T279/11 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor device has an alignment mark which can be recognized by a conventional wafer prober. A redistribution layer connects electrodes of the semiconductor device to electrode pads located in predetermined positions of the redistribution layer. Metal posts configured to be provided with external connection electrodes are formed on the electrode pads of the redistribution layer. A mark member made of the same material as the metal posts is formed on the redistribution layer. The mark member serves as an alignment mark located in a predetermined positional relationship with the metal posts.

摘要翻译： 半导体器件具有可以被常规晶片探测器识别的对准标记。 再分布层将半导体器件的电极连接到位于再分布层的预定位置的电极焊盘。 在再分配层的电极焊盘上形成配置有外部连接电极的金属柱。 在再分布层上形成由与金属柱相同的材料制成的标记构件。 标记构件用作与金属柱形成预定位置关系的对准标记。

公开(公告)号：US20110178673A1

公开(公告)日：2011-07-21

申请号：US12972872

申请日：2010-12-20

申请人： Tsutomu Nakamura ,  Kenji Takeda ,  Yasuyuki Itoh

发明人： Tsutomu Nakamura ,  Kenji Takeda ,  Yasuyuki Itoh

IPC分类号： G06F19/00

CPC分类号： G01G3/16 ,  G01G19/08

摘要： A vehicle includes a wheel and a vehicle body connected with each other via a suspension having a spring. An oscillation detection unit detects an oscillation of the vehicle body in forward and backward directions. A resonance frequency detection unit detects a resonance frequency of the vehicle body according to a detection result of the oscillation detection unit. A weight determination unit determines a weight of the vehicle body according to the resonance frequency detected by the resonance frequency detection unit.

摘要翻译： 车辆包括通过具有弹簧的悬架彼此连接的车轮和车体。 振动检测单元检测前后方向的车身振动。 谐振频率检测单元根据振荡检测单元的检测结果检测车身的共振频率。 重量确定单元根据由共振频率检测单元检测的共振频率来确定车体的重量。

公开(公告)号：US20100235038A1

公开(公告)日：2010-09-16

申请号：US12656734

申请日：2010-02-16

申请人： Yasuyuki Itoh

发明人： Yasuyuki Itoh

IPC分类号： G06F7/00 ,  G01C21/26

CPC分类号： B60R16/0236 ,  Y02T10/84

摘要： It is determined whether a vehicle enters a halting state or a slow moving state. It is detected that an accelerator opening degree of the vehicle is zero during a deceleration duration up to the time to enter the halting state or the slow moving state. Further, an accelerator zero duration is calculated which is a duration for which the vehicle is in the halting state or the slow moving state while the accelerator opening degree is zero. Furthermore, an accelerator zero travel distance is calculated which the vehicle runs during the calculated accelerator zero duration. Based on the accelerator zero travel distance, it is determined whether the fuel saving driving operation is performed in traveling during the accelerator zero travel duration. Even in the state where the travel speed of the vehicle changes more than needs during inertia travel, the fuel saving driving operation is diagnosed appropriately.

摘要翻译： 确定车辆是否进入停止状态或缓慢移动状态。 在直到进入停止状态或缓慢移动状态的减速持续时间内，车辆的加速器开度为零。 此外，计算加速器零持续时间，其为加速器开度为零时车辆处于停止状态或缓慢移动状态的持续时间。 此外，计算在所计算的加速器零持续时间内车辆行驶的加速器零行驶距离。 基于加速器零行驶距离，确定在加速器零行驶持续时间期间是否在行驶中执行节油驾驶操作。 即使在惯性行驶期间车辆的行驶速度变化超过需要的状态下，也可以适当地诊断节油驾驶操作。

公开(公告)号：US5929720A

公开(公告)日：1999-07-27

申请号：US713411

申请日：1996-09-13

申请人： Yosuke Hirata ,  Yoshika Mitsunaka ,  Kenichi Hayashi ,  Yasuyuki Itoh

发明人： Yosuke Hirata ,  Yoshika Mitsunaka ,  Kenichi Hayashi ,  Yasuyuki Itoh

IPC分类号： H01J23/40 ,  H01Q19/19 ,  H01P1/161

CPC分类号： H01J23/40 ,  H01Q19/191

摘要： An electromagnetic wave matching element makes it possible to reduce the cost of a transmission system to a great degree. An electromagnetic wave matching element is adapted to allow electromagnetic wave beams incident from an entrance to be reflected by using plural mirrors to couple these reflected electromagnetic wave beams to an external transmission system through an exit. Mirrors are used that have a shape adapted to receive the plural electromagnetic waves in a beam form and to output electromagnetic wave beams having a predetermined distribution in which the number of the output electromagnetic waves is different from the number of the received electromagnetic waves.

摘要翻译： 电磁波匹配元件可以在很大程度上降低传输系统的成本。 电磁波匹配元件适用于允许从入口入射的电磁波通过使用多个反射镜来反射，以将这些反射的电磁波束通过出口耦合到外部传输系统。 使用具有适于以波束形式接收多个电磁波的形状的反射镜，并且输出具有预定分布的电磁波束，其中输出电磁波的数量与接收的电磁波的数量不同。