发明授权
- 专利标题： Method of fabricating a semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US09849230申请日： 2001-05-07
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公开(公告)号： US06610561B2公开(公告)日： 2003-08-26
- 发明人: Kunihiro Tsubosaki , Masachika Masuda , Akihiko Iwaya , Atsushi Nakamura , Chikako Imura , Toshihiro Shiotsuki
- 申请人： Kunihiro Tsubosaki , Masachika Masuda , Akihiko Iwaya , Atsushi Nakamura , Chikako Imura , Toshihiro Shiotsuki
- 优先权： JP10-48218 19980227
- 主分类号： H01L2144
- IPC分类号： H01L2144
摘要：
The present invention provides a thin, inexpensive, high-performance semiconductor device provided with busbar leads, power leads and signal leads. A portion of the power lead connected to the busbar lead is depressed toward a major surface of a semiconductor chip to form depressed portion, and the depressed portion is bonded to the major surface of the semiconductor chip by an adhesive layer. The signal lead and the busbar lead are spaced apart from the major surface of the semiconductor chip.
公开/授权文献
- US20010016371A1 Method of fabricating a semiconductor device 公开/授权日：2001-08-23