发明授权
- 专利标题： Non-volatile semiconductor memory device
- 专利标题（中）： 非易失性半导体存储器件
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申请号： US10164625申请日： 2002-06-10
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公开(公告)号： US06611459B2公开(公告)日： 2003-08-26
- 发明人: Tatsuya Shiromoto , Natsuo Ajika , Satoshi Shimizu
- 申请人： Tatsuya Shiromoto , Natsuo Ajika , Satoshi Shimizu
- 优先权： JP2002-000322 20020107
- 主分类号： G11C1604
- IPC分类号： G11C1604
摘要：
A non-volatile semiconductor memory device usable in relatively wide applications and a method of manufacturing the same are provided. A NOR-type flash memory region (2) including a NOR-type memory cell transistor and a DINOR-type flash memory region (3) including a DINOR-type memory cell transistor are manufactured into a single semiconductor chip (1). A peripheral circuit region (7) including a transistor for a peripheral circuit or the like is manufactured into a region surrounding the NOR-type flash memory region (2) and the DINOR-type flash memory region (3). The peripheral circuit region (7) is shareable between the NOR-type flash memory region (2) and the DINOR-type flash memory region (3) by electrical connection to both of the regions.
公开/授权文献
- US20030128584A1 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE 公开/授权日：2003-07-10
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