发明授权
- 专利标题： Method of forming a semiconductor device and structure therefor
- 专利标题（中）： 形成半导体器件的方法及其结构
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申请号： US10194165申请日： 2002-07-15
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公开(公告)号： US06613622B1公开(公告)日： 2003-09-02
- 发明人: Rajesh S. Nair , Takeshi Ishiguro
- 申请人： Rajesh S. Nair , Takeshi Ishiguro
- 主分类号： H01L21337
- IPC分类号： H01L21337
摘要：
A semiconductor device (10, 40) is formed to have a well (19) in a substrate (11). The well and the substrate have the same doping type, for example both P-type or both N-type. Low resistance contact regions (26, 27) of a second conductivity type are formed to at least abut the well. A drain (17) is formed within one low resistance contact region. A source (12) is formed in the substrate and laterally displaced from the other low resistance contact region. A buried layer (21, 22, 23) is formed laterally across the well.
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