发明授权
US06620704B2 Method of fabricating low stress semiconductor devices with thermal oxide isolation
失效
制造具有热氧化隔离的低应力半导体器件的方法
- 专利标题： Method of fabricating low stress semiconductor devices with thermal oxide isolation
- 专利标题（中）： 制造具有热氧化隔离的低应力半导体器件的方法
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申请号： US09893980申请日： 2001-06-29
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公开(公告)号： US06620704B2公开(公告)日： 2003-09-16
- 发明人: Hideo Miura , Makoto Ogasawara , Hiroo Masuda , Jun Murata , Noriaki Okamoto
- 申请人： Hideo Miura , Makoto Ogasawara , Hiroo Masuda , Jun Murata , Noriaki Okamoto
- 优先权： JP5-188673 19930702
- 主分类号： H01L2176
- IPC分类号： H01L2176
摘要：
A method is provided of fabricating a semiconductor device that includes forming a silicon oxide film on a semiconductor substrate. A silicon nitrite film may be formed on the silicon oxide film. A portion of the silicon nitrite film and the silicon oxide film may be removed at a desired portion. Additionally, a groove may be formed in the semiconductor substrate in the portion in which the silicon oxide film is removed. A part of the silicon oxide film may be etched back around the groove with hydrofluoric acid type at the portion in which the silicon nitrite film is located above. Additionally, an oxidized film may be formed in the groove of the semiconductor substrate and the groove may be oxidized.