In plasma processing equipment having a vacuum processing chamber, a plasma generation means, a stage for loading a wafer to be processed in the vacuum processing chamber, an opposing electrode having an area almost equal to or wider than the aforementioned wafer which is installed opposite to the stage, and a bias power source for applying a high frequency bias to the wafer, a current path correction means is provided for correcting the current path part in the neighborhood of the outer periphery of the wafer among the high frequency current paths produced by the high frequency bias so as to be directed toward the wafer opposing surface of the opposing electrode.