发明授权
US06624457B2 Stepped structure for a multi-rank, stacked polymer memory device and method of making same
失效
多级堆叠聚合物存储器件的阶梯结构及其制造方法
- 专利标题： Stepped structure for a multi-rank, stacked polymer memory device and method of making same
- 专利标题（中）： 多级堆叠聚合物存储器件的阶梯结构及其制造方法
-
申请号： US09909670申请日： 2001-07-20
-
公开(公告)号： US06624457B2公开(公告)日： 2003-09-23
- 发明人: Jian Li , Xiao-Chun Mu
- 申请人： Jian Li , Xiao-Chun Mu
- 主分类号： H01L31119
- IPC分类号： H01L31119
摘要：
The present invention relates to a ferroelectric polymer storage device including at least two stacked ferroelectric polymer memory structures that are arrayed next to at least two respective stacked topologies that are a pre-fabricated silicon substrate cavity that includes interlayer dielectric layers and via structures.