- 专利标题: Method of photolithography
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申请号: US09827827申请日: 2001-04-05
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公开(公告)号: US06627387B2公开(公告)日: 2003-09-30
- 发明人: Kevin Hsieh , Chih-Yung Lin , Chih-Hsiang Hsiao , Juan-Yuan Wu , Water Lur
- 申请人: Kevin Hsieh , Chih-Yung Lin , Chih-Hsiang Hsiao , Juan-Yuan Wu , Water Lur
- 优先权: TW87101054A 19980126
- 主分类号: G03F726
- IPC分类号: G03F726
摘要:
A method of photolithography. An anti-reflective coating is formed on the conductive layer. An nitrogen plasma treatment is performed. A photo-resist layer is formed and patterned on the anti-reflective coating. The conductive layer is defined. The photo-resist layer is removed. The anti-reflective layer is removed by using phosphoric acid.
公开/授权文献
- US20020031726A1 Method of photolithography 公开/授权日:2002-03-14
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