A process for making semiconductor structures, and the resulting highly conductive semiconductor structures, includes using damascene process to form a structure with a thin adhesive layer and overlaying conductive layer. The highly conductive semiconductor structure has a thickness less than about 3000 Å, preferably less than about 2600 Å, and incorporates an adhesive layer that is preferably less than about 100 Å thick. Despite the reduced profile and topography of the structure, it is more conductive than prior structures, and provides a robust device.