A non-volatile memory device includes a number of memory cells, parts of which are delineated by insulators. The insulators each include both a lower trench-fill insulator portion in a trench in the substrate, and an upper protruding portion that protrudes from the substrate. Between each pair of adjacent protruding insulator portions there is a pair of floating gates, the floating gates in contact with respective of the protruding insulator portions. There is a space or gap between the floating gates, such that a portion of a control gate enters therein, separated from the substrate by only an interpoly dielectric such as an oxide-nitride-oxide (ONO) stack, and a tunnel oxide. By storing charge on the floating gates, the conductivity of a channel between the floating gates may be altered. For example, conductivity through the channel may be “pinched off” by storing charge on the floating gates.