发明授权
US06632593B2 Pattern-forming method using photomask, and pattern-forming apparatus
失效
使用光掩模的图案形成方法和图案形成装置
- 专利标题: Pattern-forming method using photomask, and pattern-forming apparatus
- 专利标题(中): 使用光掩模的图案形成方法和图案形成装置
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申请号: US09781331申请日: 2001-02-13
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公开(公告)号: US06632593B2公开(公告)日: 2003-10-14
- 发明人: Takako Yamaguchi , Ryo Kuroda
- 申请人: Takako Yamaguchi , Ryo Kuroda
- 优先权: JP2000-036609 20000215; JP2001-017289 20010125
- 主分类号: G03C500
- IPC分类号: G03C500
摘要:
A method of forming a pattern by using a photomask having both a minute aperture where a main component of transmitted light is evanescent light and an aperture where a main component of transmitted light is propagating light. The method includes the steps of forming a photoresist having a film thickness at most equal to a width of the minute aperture on a substrate to be processed, exposing the photoresist by incident light for exposure, and adjusting the film thickness of the photoresist and the conditions of the exposure so as to prevent a photoresist pattern made by the propagating light from extending to an adjacent pattern made by the evanescent light.