发明授权
- 专利标题： Transistor of semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体器件的晶体管及其制造方法
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申请号： US10141171申请日： 2002-05-09
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公开(公告)号： US06632717B2公开(公告)日： 2003-10-14
- 发明人: Kil Ho Kim , Jong Il Kim
- 申请人： Kil Ho Kim , Jong Il Kim
- 优先权： KR2001-37463 20010628
- 主分类号： H01L21334
- IPC分类号： H01L21334
摘要：
The present invention relates to a transistor of a semiconductor and a method of fabricating the same. In the method, the dual gate electrode may have different widths and is formed using a damascene process. The dual gate electrode is formed using a stacked upper having a first gate electrode and a second gate electrode. The second gate electrode may have a broader width than the lower first gate electrode.
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