公开(公告)号：US06258680B1

公开(公告)日：2001-07-10

申请号：US09154229

申请日：1998-09-16

申请人： H. Jim Fulford, Jr. ,  Mark I. Gardner ,  Derick J. Wristers

发明人： H. Jim Fulford, Jr. ,  Mark I. Gardner ,  Derick J. Wristers

IPC分类号： H01L21334

CPC分类号： H01L29/6659 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/7833 ,  Y10S257/90

摘要： A transistor is provided with a graded source/drain junction. At least two dielectric spacers are formed in sequence upon the gate conductor. Adjacent dielectric spacers have dissimilar etch characteristics. An ion implant follows the formation of at least two of the dielectric spacers to introduce dopants into the source/drain region of the transistor. The ion implants are placed in different positions a spaced distance from the gate conductor according to a thickness of the dielectric spacers. As the implants are introduced further from the channel, the implant dosage and energy is increased. In a second embodiment, the ion implants are performed in reverse order. The dielectric spacers pre-exist on the sidewall surfaces of the gate conductor. The spacers are sequentially removed followed by an ion implant. An etchant is used which attacks the spacer to be removed but not the spacer beneath to the one being removed. Each time, the implants are performed with a lower energy and with a lower dosage so as to grade the junction with lighter concentrations and energies as the implant areas approach the channel. Reversing the implantation process enables high-temperature thermal anneals required for high-concentration low-diffusivity dopants to be performed first. The LDD implant comprises dopants of lower concentration and higher diffusivity requiring lower temperature anneals. Performing lower temperature anneals later in the sequence affords a lessened opportunity for undesirable short-channel effects.

摘要翻译： 晶体管具有渐变源极/漏极结。 在栅极导体上依次形成至少两个电介质间隔物。 相邻的电介质间隔物具有不同的蚀刻特性。 离子注入沿着至少两个电介质间隔物的形成，以将掺杂剂引入到晶体管的源极/漏极区域中。 离子植入物根据电介质间隔物的厚度被放置在与栅极导体间隔距离的不同位置。 随着植入物从通道进一步引入，植入物剂量和能量增加。 在第二实施例中，以相反的顺序执行离子注入。 电介质垫片预先存在于栅极导体的侧壁表面上。 依次移除间隔物，然后离子注入。 使用蚀刻剂来攻击待移除的间隔物，而不是将垫片下移到被去除的间隔物。 每次，植入物以较低的能量和较低的剂量进行，以便随着植入区域接近通道而将结点分级为较轻的浓度和能量。 倒置注入工艺可以实现高浓度低扩散性掺杂剂首先要求的高温热退火。 LDD植入物包含较低浓度和较高扩散系数的掺杂剂，需要较低的温度退火。 在该顺序的稍后进行较低的温度退火可以减少不期望的短通道效应的机会。

公开(公告)号：US06632717B2

公开(公告)日：2003-10-14

申请号：US10141171

申请日：2002-05-09

申请人： Kil Ho Kim ,  Jong Il Kim

发明人： Kil Ho Kim ,  Jong Il Kim

IPC分类号： H01L21334

CPC分类号： H01L29/6659 ,  H01L21/28114

摘要： The present invention relates to a transistor of a semiconductor and a method of fabricating the same. In the method, the dual gate electrode may have different widths and is formed using a damascene process. The dual gate electrode is formed using a stacked upper having a first gate electrode and a second gate electrode. The second gate electrode may have a broader width than the lower first gate electrode.

摘要翻译： 半导体晶体管及其制造方法技术领域本发明涉及半导体晶体管及其制造方法。 在该方法中，双栅电极可以具有不同的宽度并且使用镶嵌工艺形成。 双栅电极使用具有第一栅电极和第二栅电极的堆叠的上部形成。 第二栅电极可以具有比下第一栅电极宽的宽度

公开(公告)号：US06251712B1

公开(公告)日：2001-06-26

申请号：US08928740

申请日：1997-09-12

申请人： Koichiro Tanaka ,  Hideto Ohnuma

发明人： Koichiro Tanaka ,  Hideto Ohnuma

IPC分类号： H01L21334

CPC分类号： H01L29/78621 ,  H01L29/66757

摘要： A method for producing a thin-film transistor by using a crystalline silicon film that has been formed by using nickel as a metal element for accelerating crystallization of silicon. In forming source and drain regions, phosphorus as an element for gettering nickel is introduced therein by ion implantation. Nickel gettering is effected by annealing. For example, in the case of producing a P-channel thin-film transistor, both phosphorus and boron are used. Boron determines a conductivity type, and phosphorus is used as a gettering material.

摘要翻译： 通过使用通过使用镍作为加速硅的结晶的金属元素形成的结晶硅膜来制造薄膜晶体管的方法。 在形成源极和漏极区域中，通过离子注入引入作为吸杂镍的元素的磷。 镍的除气是通过退火进行的。 例如，在制造P沟道薄膜晶体管的情况下，使用磷和硼。 硼决定导电类型，磷用作吸气材料。