发明授权
- 专利标题: Magnetoresistive element
- 专利标题(中): 磁阻元件
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申请号: US09840869申请日: 2001-04-25
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公开(公告)号: US06633465B2公开(公告)日: 2003-10-14
- 发明人: Hiroyuki Hoshiya , Katsuya Mitsuoka , Masaaki Sano , Reiko Arai , Susumu Soeya , Hiroshi Fukui , Moriaki Fuyama , Fumio Sato
- 申请人: Hiroyuki Hoshiya , Katsuya Mitsuoka , Masaaki Sano , Reiko Arai , Susumu Soeya , Hiroshi Fukui , Moriaki Fuyama , Fumio Sato
- 优先权: JP4-092562 19920413; JP5-018430 19930205
- 主分类号: G11B539
- IPC分类号: G11B539
摘要:
A magnetoresistive element includes a first antiferromagnetic film, a first magnetic film having a magnetization direction fixed by magnetic coupling with the first antiferromagnetic film, a second antiferromagnetic film, a second magnetic film having a magnetization direction fixed by magnetic coupling with the second antiferromagnetic film, a third magnetic film having a magnetization direction able to rotate in response to an applied magnetic field, a first nonmagnetic film disposed between the first magnetic film and the third magnetic film, and a second nonmagnetic film disposed between the second magnetic film and the third magnetic film. The third magnetic film is disposed between the first nonmagnetic film and the second nonmagnetic film, the first magnetic film is disposed between the first antiferromagnetic film and the first nonmagnetic film, and the second magnetic film is disposed between the second antiferromagnetic film and the second nonmagnetic film.
公开/授权文献
- US20010017752A1 Magnetoresistive element 公开/授权日:2001-08-30
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