- 专利标题: Metallizing method for dielectrics
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申请号: US10156484申请日: 2002-05-28
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公开(公告)号: US06635410B2公开(公告)日: 2003-10-21
- 发明人: Joerg Haussmann , Klaus Lowack , Wolfgang Radlik , Guenter Schmid , Recai Sezi
- 申请人: Joerg Haussmann , Klaus Lowack , Wolfgang Radlik , Guenter Schmid , Recai Sezi
- 优先权: DE19957130 19991126
- 主分类号: G03F700
- IPC分类号: G03F700
摘要:
A method for metallizing dielectrics includes applying a photosensitive dielectric to a substrate. The dielectric is then exposed to light through a mask, is seeded with a metal and is subjected to a temperature treatment. Afterwards, the dielectric is chemically metallized. Alternatively, the dielectric can be first be seeded with a metal after being applied to the substrate, and can then be exposed to light through a mask. Afterwards, excess seeding material is removed and the dielectric is chemically metallized.
公开/授权文献
- US20020172892A1 Metallizing method for dielectrics 公开/授权日:2002-11-21