发明授权
- 专利标题： Methods of forming gated semiconductor assemblies
- 专利标题（中）： 形成门控半导体组件的方法
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申请号： US09057148申请日： 1998-04-07
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公开(公告)号： US06635530B2公开(公告)日： 2003-10-21
- 发明人: Mark A. Helm , Mark Fischer , John T. Moore , Scott Jeffrey DeBoer
- 申请人： Mark A. Helm , Mark Fischer , John T. Moore , Scott Jeffrey DeBoer
- 主分类号： H01L21336
- IPC分类号： H01L21336
摘要：
The invention includes a method of forming a gated semiconductor assembly. A first transistor gate layer is formed over a substrate. A silicon nitride layer is formed over the first transistor gate layer. The silicon nitride layer comprises a first portion and a second portion elevationally displaced above the first portion. The first portion has less electrical resistance than the second portion and a different stoichiometric composition than the second portion. The first portion is physically against the second portion. A second transistor gate layer is formed over the silicon nitride layer.
公开/授权文献
- US20020001897A1 METHODS OF FORMING GATED SEMICONDUCTOR ASSEMBLIES 公开/授权日：2002-01-03