发明授权
US06635943B1 Method and system for reducing charge gain and charge loss in interlayer dielectric formation
有权
降低层间电介质形成中电荷增益和电荷损失的方法和系统
- 专利标题： Method and system for reducing charge gain and charge loss in interlayer dielectric formation
- 专利标题（中）： 降低层间电介质形成中电荷增益和电荷损失的方法和系统
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申请号： US09533617申请日： 2000-03-22
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公开(公告)号： US06635943B1公开(公告)日： 2003-10-21
- 发明人: Angela T. Hui , Tuan Duc Pham , Richard J. Huang , Mark T. Ramsbey , Lu You
- 申请人： Angela T. Hui , Tuan Duc Pham , Richard J. Huang , Mark T. Ramsbey , Lu You
- 主分类号： H01L2900
- IPC分类号： H01L2900
摘要：
A method and system for insulating a lower layer of a semiconductor device from an upper layer of the semiconductor device is disclosed. The method and system include providing an interlayer dielectric on the lower layer. The interlayer dielectric is capable of gap filling while using only species of relatively low mobility. The method and system also include planarizing a surface of the interlayer dielectric.
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