发明授权
- 专利标题： Silicon dioxide etch process which protects metals
- 专利标题（中）： 保护金属的二氧化硅蚀刻工艺
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申请号： US09149474申请日： 1998-09-08
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公开(公告)号： US06638445B2公开(公告)日： 2003-10-28
- 发明人: Robert T. Rasmussen , Surjit S. Chadha , David A. Cathey
- 申请人： Robert T. Rasmussen , Surjit S. Chadha , David A. Cathey
- 主分类号： C09K1300
- IPC分类号： C09K1300
摘要：
The present invention is directed to a novel etching process for a semiconductor material which inhibits corrosion of metal comprised of pretreating the material, preferably with a surfactant, and then exposing the material to a mixture comprising salt, a buffered oxide etch, and optionally a surfactant.
公开/授权文献
- US20010038090A1 SILICON DIOXIDE ETCH PROCESS WHICH PROTECTS METALS 公开/授权日：2001-11-08
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