- 专利标题: Nonlithographic method to produce masks by selective reaction, articles produced, and composition for same
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申请号: US10287935申请日: 2002-11-05
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公开(公告)号: US06641899B1公开(公告)日: 2003-11-04
- 发明人: Matthew E Colburn , Stephen M Gates , Jeffrey C Hedrick , Elbert Huang , Satyanarayana V Nitta , Sampath Purushothaman , Muthumanickam Sankarapandian
- 申请人: Matthew E Colburn , Stephen M Gates , Jeffrey C Hedrick , Elbert Huang , Satyanarayana V Nitta , Sampath Purushothaman , Muthumanickam Sankarapandian
- 主分类号: B32B300
- IPC分类号: B32B300
摘要:
A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of the masking material to the substrate; and allowing at least a portion of the masking material to preferentially attach to portions of the existing pattern. The pattern is comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The masking material may comprise a polymer containing a reactive grafting site that selectively binds to the portions of the pattern. The masking material may include a polymer that binds to the portions of the pattern to provide a layer of functional groups suitable for polymerization initiation, a reactive molecule having functional groups suitable for polymerization propagation, or a reactive molecule, wherein reaction of the reactive molecule with the portion of the pattern generates a layer having reactive groups, which participate in step growth polymerization. Structures in accordance with the method. Compositions for practicing the method.
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