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    Selectively coated self-aligned mask
    1.
    发明授权
    Selectively coated self-aligned mask 有权
    选择性涂层自对准面膜

    公开(公告)号：US08491987B2

    公开(公告)日：2013-07-23

    申请号：US12164647

    申请日：2008-06-30

    申请人： Matthew E Colburn ,  Stephen M Gates ,  Jeffrey C Hedrick ,  Elbert Huang ,  Satyanarayana V Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

    发明人： Matthew E Colburn ,  Stephen M Gates ,  Jeffrey C Hedrick ,  Elbert Huang ,  Satyanarayana V Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

    IPC分类号： H01L23/58 ,  C08L53/00

    CPC分类号： H05K3/0079 ,  H01L21/0331 ,  H01L21/76849 ,  H05K3/282 ,  H05K2203/1173 ,  Y10T428/24802

    摘要： A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having an affinity for portions of the existing pattern; and allowing at least a portion of the masking material to preferentially assemble to the portions of the existing pattern. The pattern may be comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The first and second regions may be treated to have different surface properties. Structures made in accordance with the method. Compositions useful for practicing the method.

    摘要翻译： 一种用于在衬底上的现有图案上形成自对准图案的方法，包括在载体中涂覆含有掩蔽材料的溶液的涂层，所述掩模材料对现有图案的部分具有亲和力; 并且允许掩模材料的至少一部分优先组装到现有图案的部分。 该图案可以由具有第一原子组成的衬底的第一组区域和第二组衬底的区域组成，其具有不同于第一组成的第二原子组成。 第一组区域可以包括一个或多个金属元件，并且第二组区域可以包括电介质。 可以将第一和第二区域处理成具有不同的表面性质。 按照该方法制造的结构。 用于练习该方法的组合物。

    Nonlithographic method to produce self-aligned mask, articles produced by same and compositions for same
    2.
    发明授权
    Nonlithographic method to produce self-aligned mask, articles produced by same and compositions for same 有权
    用于制备自对准掩模的非光刻方法，由相同制备的制品和用于其的组合物

    公开(公告)号：US07948051B2

    公开(公告)日：2011-05-24

    申请号：US12164599

    申请日：2008-06-30

    申请人： Matthew E Colburn ,  Stephen M Gates ,  Jeffrey C Hedrick ,  Elbert Huang ,  Satyanarayana V Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

    发明人： Matthew E Colburn ,  Stephen M Gates ,  Jeffrey C Hedrick ,  Elbert Huang ,  Satyanarayana V Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

    IPC分类号： H01L21/70

    CPC分类号： H05K3/0079 ,  H01L21/0331 ,  H01L21/76849 ,  H05K3/282 ,  H05K2203/1173 ,  Y10T428/24802

    摘要： A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having an affinity for portions of the existing pattern; and allowing at least a portion of the masking material to preferentially assemble to the portions of the existing pattern. The pattern may be comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The first and second regions may be treated to have different surface properties. Structures made in accordance with the method. Compositions useful for practicing the method.

    摘要翻译： 一种用于在衬底上的现有图案上形成自对准图案的方法，包括在载体中涂覆含有掩蔽材料的溶液的涂层，所述掩模材料对现有图案的部分具有亲和力; 并且允许掩模材料的至少一部分优先组装到现有图案的部分。 该图案可以由具有第一原子组成的衬底的第一组区域和第二组衬底的区域组成，其具有不同于第一组成的第二原子组成。 第一组区域可以包括一个或多个金属元件，并且第二组区域可以包括电介质。 可以将第一和第二区域处理成具有不同的表面性质。 按照该方法制造的结构。 用于练习该方法的组合物。

    Nonlithographic method to produce masks by selective reaction, articles produced, and composition for same
    5.
    发明授权
    Nonlithographic method to produce masks by selective reaction, articles produced, and composition for same 失效
    通过选择性反应制备掩模的非光刻方法，制备的制品和用于其的组合物

    公开(公告)号：US07485341B2

    公开(公告)日：2009-02-03

    申请号：US10421306

    申请日：2003-04-23

    申请人： Matthew E Colburn ,  Stephen M Gates ,  Jeffrey C Hedrick ,  Elbert Huang ,  Satyanarayana V Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

    发明人： Matthew E Colburn ,  Stephen M Gates ,  Jeffrey C Hedrick ,  Elbert Huang ,  Satyanarayana V Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

    IPC分类号： B05D1/32

    CPC分类号： H01L21/76849 ,  B82Y30/00 ,  G03F7/165 ,  H01L21/0331 ,  H01L21/31058 ,  H05K3/0079 ,  Y10T428/24802 ,  Y10T428/24917 ,  Y10T428/24926

    摘要： A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of the masking material to the substrate; and allowing at least a portion of the masking material to preferentially attach to portions of the existing pattern. The pattern is comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The masking material may comprise a polymer containing a reactive grafting site that selectively binds to the portions of the pattern. The masking material may include a polymer that binds to the portions of the pattern to provide a layer of functional groups suitable for polymerization initiation, a reactive molecule having functional groups suitable for polymerization propagation, or a reactive molecule, wherein reaction of the reactive molecule with the portion of the pattern generates a layer having reactive groups, which participate in step growth polymerization. Structures in accordance with the method. Compositions for practicing the method.

    摘要翻译： 一种用于在衬底上的现有图案上形成自对准图案的方法，包括将掩模材料的涂层施加到衬底上; 并且允许掩模材料的至少一部分优先地附着到现有图案的部分上。 该图案由具有第一原子组成的基底的第一组区域和具有不同于第一组成的第二原子组成的基底的第二组区域组成。 第一组区域可以包括一个或多个金属元件，并且第二组区域可以包括电介质。 掩模材料可以包含含有选择性结合图案部分的反应性接枝位点的聚合物。 掩蔽材料可以包括聚合物，其结合图案的部分以提供适于聚合起始的官能团层，具有适用于聚合扩展的官能团的反应性分子或反应性分子，其中反应性分子与 图案的部分产生具有反应性基团的层，其参与步骤生长聚合。 结构按照方法。 组合练习方法。

    INTERCONNECT STRUCTURES WITH TERNARY PATTERNED FEATURES GENERATED FROM TWO LITHOGRAPHIC PROCESSES
    8.
    发明申请
    INTERCONNECT STRUCTURES WITH TERNARY PATTERNED FEATURES GENERATED FROM TWO LITHOGRAPHIC PROCESSES 审中-公开
    具有由两个光刻过程产生的三维特征的互连结构

    公开(公告)号：US20080284039A1

    公开(公告)日：2008-11-20

    申请号：US11750892

    申请日：2007-05-18

    申请人： Matthew E. Colburn ,  Elbert Huang ,  Satyanarayana V. Nitta ,  Sampath Purushothaman

    发明人： Matthew E. Colburn ,  Elbert Huang ,  Satyanarayana V. Nitta ,  Sampath Purushothaman

    IPC分类号： H01L23/52 ,  H01L21/4763

    CPC分类号： H01L23/53238 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76816 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for fabricating an interconnect structure for interconnecting a semiconductor substrate to have three distinct patterned structures such that the interconnect structure provides both a low k and high structural integrity. The method includes depositing an interlayer dielectric onto the semiconductor substrate, forming a first pattern within the interlayer dielectric material by a first lithographic process that results in both via features and ternary features being formed in the interconnect structure. The method further includes forming a second pattern within the interlayer dielectric material by a second lithographic process to form line features within the interconnect structure. Hence the method forms the three separate distinct patterned structures using only two lithographic processes for each interconnect level.

    摘要翻译： 一种制造互连结构的方法，用于将半导体衬底互连以具有三个不同的图案化结构，使得互连结构既提供低k和高结构完整性。 该方法包括在半导体衬底上沉积层间电介质，通过第一光刻工艺在层间电介质材料内形成第一图案，该第一光刻工艺导致在互连结构中形成通孔特征和三元特征。 该方法还包括通过第二光刻工艺在层间电介质材料内形成第二图案以在互连结构内形成线特征。 因此，该方法仅对每个互连级别仅使用两个光刻工艺形成三个独立的不同图案结构。

    INTERCONNECT STRUCTURES WITH TERNARY PATTERNED FEATURES GENERATED FROM TWO LITHOGRAPHIC PROCESSES
    9.
    发明申请
    INTERCONNECT STRUCTURES WITH TERNARY PATTERNED FEATURES GENERATED FROM TWO LITHOGRAPHIC PROCESSES 有权
    具有由两个光刻过程产生的三维特征的互连结构

    公开(公告)号：US20090294982A1

    公开(公告)日：2009-12-03

    申请号：US12538114

    申请日：2009-08-08

    申请人： Matthew E. Colburn ,  Elbert Huang ,  Satyanarayana V. Nitta ,  Sampath Purushothaman

    发明人： Matthew E. Colburn ,  Elbert Huang ,  Satyanarayana V. Nitta ,  Sampath Purushothaman

    IPC分类号： H01L23/522

    CPC分类号： H01L23/53238 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76816 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for fabricating an interconnect structure for interconnecting a semiconductor substrate to have three distinct patterned structures such that the interconnect structure provides both a low k and high structural integrity. The method includes depositing an interlayer dielectric onto the semiconductor substrate, forming a first pattern within the interlayer dielectric material by a first lithographic process that results in both via features and ternary features being formed in the interconnect structure. The method further includes forming a second pattern within the interlayer dielectric material by a second lithographic process to form line features within the interconnect structure. Hence the method forms the three separate distinct patterned structures using only two lithographic processes for each interconnect level.

    摘要翻译： 一种制造互连结构的方法，用于将半导体衬底互连以具有三个不同的图案化结构，使得互连结构既提供低k和高结构完整性。 该方法包括在半导体衬底上沉积层间电介质，通过第一光刻工艺在层间电介质材料内形成第一图案，该第一光刻工艺导致在互连结构中形成通孔特征和三元特征。 该方法还包括通过第二光刻工艺在层间电介质材料内形成第二图案以在互连结构内形成线特征。 因此，该方法仅对每个互连级别仅使用两个光刻工艺形成三个独立的不同图案结构。

    Interconnect structures with ternary patterned features generated from two lithographic processes
    10.
    发明授权
    Interconnect structures with ternary patterned features generated from two lithographic processes 有权
    互连结构与从两个光刻过程产生的三元图案特征

    公开(公告)号：US08338952B2

    公开(公告)日：2012-12-25

    申请号：US12538114

    申请日：2009-08-08

    申请人： Matthew E. Colburn ,  Elbert Huang ,  Satyanarayana V. Nitta ,  Sampath Purushothaman

    发明人： Matthew E. Colburn ,  Elbert Huang ,  Satyanarayana V. Nitta ,  Sampath Purushothaman

    IPC分类号： H01L21/70 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H01L23/53238 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76816 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for fabricating an interconnect structure for interconnecting a semiconductor substrate to have three distinct patterned structures such that the interconnect structure provides both a low k and high structural integrity. The method includes depositing an interlayer dielectric onto the semiconductor substrate, forming a first pattern within the interlayer dielectric material by a first lithographic process that results in both via features and ternary features being formed in the interconnect structure. The method further includes forming a second pattern within the interlayer dielectric material by a second lithographic process to form line features within the interconnect structure. Hence the method forms the three separate distinct patterned structures using only two lithographic processes for each interconnect level.

    摘要翻译： 一种制造互连结构的方法，用于将半导体衬底互连以具有三个不同的图案化结构，使得互连结构既提供低k和高结构完整性。 该方法包括在半导体衬底上沉积层间电介质，通过第一光刻工艺在层间电介质材料内形成第一图案，该第一光刻工艺导致在互连结构中形成通孔特征和三元特征。 该方法还包括通过第二光刻工艺在层间电介质材料内形成第二图案以在互连结构内形成线特征。 因此，该方法仅对每个互连级别仅使用两个光刻工艺形成三个独立的不同图案结构。