发明授权
US06642087B2 Solid state imaging device having a photodiode and a MOSFET and method of manufacturing the same
失效
具有光电二极管和MOSFET的固态成像装置及其制造方法
- 专利标题： Solid state imaging device having a photodiode and a MOSFET and method of manufacturing the same
- 专利标题（中）： 具有光电二极管和MOSFET的固态成像装置及其制造方法
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申请号： US10339395申请日： 2003-01-10
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公开(公告)号： US06642087B2公开(公告)日： 2003-11-04
- 发明人: Hidetoshi Nozaki , Ikuko Inoue , Hirofumi Yamashita
- 申请人： Hidetoshi Nozaki , Ikuko Inoue , Hirofumi Yamashita
- 优先权： JP2000-088971 20000328; JP2000-302660 20001002
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
A readout gate electrode is selectively formed on a silicon substrate. An N-type drain region is formed at one end of the readout gate electrode, and an N-type signal storage region is formed at the other end thereof. A P+-type surface shield region is selectively epitaxial-grown on the signal storage region, and a silicide block layer is formed on the surface shield region to cover at least part of the signal storage region. A Ti silicide film is selective epitaxial-grown on the drain region.
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