发明授权
- 专利标题： Silicide MOSFET architecture and method of manufacture
- 专利标题（中）： 硅化物MOSFET结构及其制造方法
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申请号： US10215171申请日： 2002-08-08
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公开(公告)号： US06642119B1公开(公告)日： 2003-11-04
- 发明人: Mario M. Pelella , Shankar Sinha , Simon S. Chan
- 申请人： Mario M. Pelella , Shankar Sinha , Simon S. Chan
- 主分类号： H01L21336
- IPC分类号： H01L21336
摘要：
The present invention relates to a method of forming a transistor and a transistor structure. The invention comprises forming the transistor using a double silicide process which reduces resistance and reduces the floating-body-effect when employed in conjunction with SOI type device architecture.
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