- 专利标题: Semiconductor device and method of fabricating the same
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申请号: US10093313申请日: 2002-03-07
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公开(公告)号: US06645826B2公开(公告)日: 2003-11-11
- 发明人: Shunpei Yamazaki , Taketomi Asami , Toru Takayama , Ritsuko Kawasaki , Hiroki Adachi , Naoya Sakamoto , Masahiko Hayakawa , Hiroshi Shibata , Yasuyuki Arai
- 申请人: Shunpei Yamazaki , Taketomi Asami , Toru Takayama , Ritsuko Kawasaki , Hiroki Adachi , Naoya Sakamoto , Masahiko Hayakawa , Hiroshi Shibata , Yasuyuki Arai
- 优先权: JP10-377418 19981229; JP11-008494 19990114
- 主分类号: H01L2126
- IPC分类号: H01L2126
摘要:
In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of the crystalline semiconductor layer having tensile stress on a substrate, tensile stress is given to the first insulating layer formed to be in close contact with a surface of the semiconductor layer at a substrate side, and compressive stress is given to the second insulating layer formed to be in close contact with a surface of the semiconductor layer at a side opposite to the substrate side.
公开/授权文献
- US20020167007A1 Semiconductor device and method of fabricating the same 公开/授权日:2002-11-14
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