- 专利标题： Multi-layered polysilicon process
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申请号： US09967061申请日： 2001-09-28
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公开(公告)号： US06645840B2公开(公告)日： 2003-11-11
- 发明人: Douglas T. Grider , Che Jen Hu
- 申请人： Douglas T. Grider , Che Jen Hu
- 主分类号： H01L213205
- IPC分类号： H01L213205
摘要：
A method for forming a notched MOS gate structure is described. A multi-layer gate structure is formed (150) where the top layer (140) oxidizes at a faster rate compared to the bottom layer (130). This results in the formation of a notch (165) in the gate structure after thermal oxidation processes.
公开/授权文献
- US20020048918A1 Multi-layered polysilicon process 公开/授权日：2002-04-25
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