发明授权
- 专利标题： Film forming method, semiconductor device and manufacturing method of the same
- 专利标题（中）： 成膜方法，半导体装置及其制造方法
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申请号： US09863382申请日： 2001-05-24
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公开(公告)号： US06645883B2公开(公告)日： 2003-11-11
- 发明人: Youichi Yamamoto , Hiroshi Ikakura , Tomomi Suzuki , Yuichiro Kotake , Yoshimi Shioya , Kouichi Ohira , Shoji Ohgawara , Kazuo Maeda
- 申请人： Youichi Yamamoto , Hiroshi Ikakura , Tomomi Suzuki , Yuichiro Kotake , Yoshimi Shioya , Kouichi Ohira , Shoji Ohgawara , Kazuo Maeda
- 优先权： JP2000-188287 20000622
- 主分类号： H01L2131
- IPC分类号： H01L2131
摘要：
The present invention discloses a film forming method for forming an insulating film having a low dielectric constant. This method comprises the steps of adding at least one diluting gas of an inert gas and a nitrogen gas (N2) to a major deposition gas component consisting of siloxane and N2O, converting the resultant deposition gas into plasma, causing reaction in the plasma, and forming an insulating film 25,27, or 28 on a substrate targeted for film formation.