发明授权
- 专利标题： Method of angle implant to improve transistor reverse narrow width effect
- 专利标题（中）： 角度植入法提高晶体管反向窄宽效应
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申请号： US10132356申请日： 2002-04-25
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公开(公告)号： US06649461B1公开(公告)日： 2003-11-18
- 发明人: Tommy Mau Lam Lai , Weining Li , Yung Tao Lin
- 申请人： Tommy Mau Lam Lai , Weining Li , Yung Tao Lin
- 主分类号： H01L218238
- IPC分类号： H01L218238
摘要：
A new angle implant is provided that reduces or eliminates the effects of narrow channel impurity diffusion to surrounding regions of insulation. The invention provides for angle implantation of p-type impurities into corners of STI regions that are adjacent to NMOS devices and angle implantation of n-type impurities into corners of STI regions that are adjacent to PMOS devices.
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