- 专利标题: Photoelectric conversion device and method of manufacturing the same
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申请号: US10082788申请日: 2002-02-22
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公开(公告)号: US06653552B2公开(公告)日: 2003-11-25
- 发明人: Shin Sugawara , Takeshi Kyoda , Nobuyuki Kitahara , Hisao Arimune , Toshifumi Kiyohara , Ken Watanuki
- 申请人: Shin Sugawara , Takeshi Kyoda , Nobuyuki Kitahara , Hisao Arimune , Toshifumi Kiyohara , Ken Watanuki
- 优先权: JP2001-053288 20010228; JP2001-097713 20010329; JP2001-097714 20010329; JP2001-100387 20010330
- 主分类号: H01L310352
- IPC分类号: H01L310352
摘要:
There is provided a photoelectric conversion device comprising a lower electrode, numerous crystalline semiconductor particles of one conductivity type deposited on the lower electrode, an insulator interposed among the crystalline semiconductor particles, and a semiconductor layer of the opposite conductivity type provided over the crystalline semiconductor particles, in which a pyramidal projection having a cross section in the shape of a trapezoid or triangle and a lateral face that faces one of the crystalline semiconductor particles is provided between the crystalline semiconductor particles. In this device, light incident on areas among the crystalline semiconductor particles is reflected or refracted by the pyramidal projection and directed into the crystalline semiconductor particles. Accordingly, this device can achieve high conversion efficiency.