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公开(公告)号：US06653552B2
公开(公告)日：2003-11-25
申请号：US10082788
申请日：2002-02-22
申请人： Shin Sugawara , Takeshi Kyoda , Nobuyuki Kitahara , Hisao Arimune , Toshifumi Kiyohara , Ken Watanuki
发明人： Shin Sugawara , Takeshi Kyoda , Nobuyuki Kitahara , Hisao Arimune , Toshifumi Kiyohara , Ken Watanuki
IPC分类号： H01L310352
CPC分类号： H01L31/035281 , H01L31/036 , H01L31/0547 , Y02E10/52
摘要： There is provided a photoelectric conversion device comprising a lower electrode, numerous crystalline semiconductor particles of one conductivity type deposited on the lower electrode, an insulator interposed among the crystalline semiconductor particles, and a semiconductor layer of the opposite conductivity type provided over the crystalline semiconductor particles, in which a pyramidal projection having a cross section in the shape of a trapezoid or triangle and a lateral face that faces one of the crystalline semiconductor particles is provided between the crystalline semiconductor particles. In this device, light incident on areas among the crystalline semiconductor particles is reflected or refracted by the pyramidal projection and directed into the crystalline semiconductor particles. Accordingly, this device can achieve high conversion efficiency.
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公开(公告)号：US06620997B2
公开(公告)日：2003-09-16
申请号：US10046017
申请日：2001-10-29
申请人： Takeshi Kyoda , Shin Sugawara , Hisao Arimune , Nobuyuki Kitahara
发明人： Takeshi Kyoda , Shin Sugawara , Hisao Arimune , Nobuyuki Kitahara
IPC分类号： H01L310352
CPC分类号： H01L31/035281 , H01L31/022425 , H01L31/03529 , Y02E10/50
摘要： In a photoelectric conversion device having numerous crystalline semiconductor grains deposited on a substrate, the substrate includes an aluminum layer or an aluminum alloy layer, an intermediate layer, and a base material layer, in which the intermediate layer is arranged such that it is composed mainly of one or a plurality of elements selected from among nickel, titanium, chromium, and cobalt. With the constitution as above, it is possible to suppress reaction between the aluminum electrode layer and the base material layer, thereby maintaining the high adhesiveness of the aluminum electrode layer. A photoelectric conversion device with high reliability and high conversion efficiency is therefore realized.
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公开(公告)号：US06563041B2
公开(公告)日：2003-05-13
申请号：US09996537
申请日：2001-11-27
申请人： Shin Sugawara , Takeshi Kyoda , Nobuyuki Kitahara , Hisao Arimune
发明人： Shin Sugawara , Takeshi Kyoda , Nobuyuki Kitahara , Hisao Arimune
IPC分类号： H01L31052
CPC分类号： H01L31/0384 , H01L31/022425 , H01L31/02366 , H01L31/035281 , H01L31/0475 , H01L31/0547 , H01L31/056 , Y02E10/52
摘要： This photoelectric conversion device comprises a lower electrode, numerous p-type crystalline semiconductor particles deposited thereon, an insulator formed among the crystalline semiconductor particles, and a n-type semiconductor layer formed on the side of the upper portions of the crystalline semiconductor particles. The insulator is formed of a translucent material, and the surface of the lower electrode has been subjected to roughening treatment. Roughening the surface of the lower electrode allows light incident on the surface of the lower electrode to be scattered and directed to the crystalline semiconductor particles so that the photoelectric conversion efficiency is improved.
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公开(公告)号：US07001543B2
公开(公告)日：2006-02-21
申请号：US10277610
申请日：2002-10-21
申请人： Nobuyuki Kitahara , Toshio Suzuki , Noboru Suda , Shin Sugawara , Hisao Arimune
发明人： Nobuyuki Kitahara , Toshio Suzuki , Noboru Suda , Shin Sugawara , Hisao Arimune
IPC分类号： B29B9/10
CPC分类号： C30B29/06 , C30B11/00 , C30B30/08 , H01L31/1804 , H01L31/182 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A crucible is formed of a cylindrical body member and a disk-shaped nozzle member fitted to the bottom portion of the body member, and the nozzle member is provided with a nozzle hole for discharging out a semiconductor molten solution dropwise therethrough. The semiconductor molten solution drops discharged out of the crucible through the nozzle hole are cooled and solidified during falling to become semiconductor grains. Silicon grains having high crystal quality can be manufactured at low cost.
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公开(公告)号：US20060213427A1
公开(公告)日：2006-09-28
申请号：US11387624
申请日：2006-03-22
CPC分类号： C30B11/00 , C30B29/06 , C30B29/36 , C30B29/38 , C30B29/607 , Y10T117/1056
摘要： In a method for manufacturing a granular silicon crystal by allowing silicon melt in a crucible to be granularly discharged and fallen from a nozzle part composed of silicon carbide or silicon nitride, and cooling and solidifying the granular silicon melt during falling, a carbon source is added when the nozzle part is composed of silicon carbide, and a nitrogen source is added when the nozzle part is composed of silicon nitride, to the silicon melt in the crucible. Thereby, melt droplets of uniform size can be generated, so that granular silicon crystals having narrow variations in particle size can be manufactured at high productivity and superior reproducibility.
摘要翻译： 在通过使坩埚中的硅熔体从由碳化硅或氮化硅构成的喷嘴部粒状地排出并落下而制造粒状硅晶体的方法中，在下降时使粒状硅熔体冷却固化，添加碳源 当喷嘴部分由碳化硅组成时，并且当喷嘴部分由氮化硅组成时，将氮源添加到坩埚中的硅熔体。 因此，可以产生均匀尺寸的熔融液滴，从而可以以高生产率和优异的再现性制造具有窄粒度变化的粒状硅晶体。
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公开(公告)号：USRE41512E1
公开(公告)日：2010-08-17
申请号：US12030452
申请日：2008-02-13
申请人： Nobuyuki Kitahara , Toshio Suzuki , Noboru Suda , Shin Sugawara , Hisao Arimune
发明人： Nobuyuki Kitahara , Toshio Suzuki , Noboru Suda , Shin Sugawara , Hisao Arimune
IPC分类号： B29B9/10
CPC分类号： C30B29/06 , C30B11/00 , C30B30/08 , H01L31/1804 , H01L31/182 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A crucible is formed of a cylindrical body member and a disk-shaped nozzle member fitted to the bottom portion of the body member, and the nozzle member is provided with a nozzle hole for discharging out a semiconductor molten solution dropwise therethrough. The semiconductor molten solution drops discharged out of the crucible through the nozzle hole are cooled and solidified during falling to become semiconductor grains. Silicon grains having high crystal quality can be manufactured at low cost.
摘要翻译： 坩埚由圆柱形本体构件和安装在本体构件的底部的盘形喷嘴构件形成，并且喷嘴构件设置有用于从其中逐滴排出半导体熔融溶液的喷嘴孔。 通过喷嘴孔从坩埚中排出的半导体熔融液滴在下降期间被冷却和凝固成半导体晶粒。 可以以低成本制造具有高晶体质量的硅晶粒。
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公开(公告)号：US07323047B2
公开(公告)日：2008-01-29
申请号：US11387624
申请日：2006-03-22
IPC分类号： C30B15/20
CPC分类号： C30B11/00 , C30B29/06 , C30B29/36 , C30B29/38 , C30B29/607 , Y10T117/1056
摘要： In a method for manufacturing a granular silicon crystal by allowing silicon melt in a crucible to be granularly discharged and fallen from a nozzle part composed of silicon carbide or silicon nitride, and cooling and solidifying the granular silicon melt during falling, a carbon source is added when the nozzle part is composed of silicon carbide, and a nitrogen source is added when the nozzle part is composed of silicon nitride, to the silicon melt in the crucible. Thereby, melt droplets of uniform size can be generated, so that granular silicon crystals having narrow variations in particle size can be manufactured at high productivity and superior reproducibility.
摘要翻译： 在通过使坩埚中的硅熔体从由碳化硅或氮化硅构成的喷嘴部粒状地排出并落下而制造粒状硅晶体的方法中，在下降时使粒状硅熔体冷却固化，添加碳源 当喷嘴部分由碳化硅组成时，并且当喷嘴部分由氮化硅组成时，将氮源添加到坩埚中的硅熔体。 因此，可以产生均匀尺寸的熔融液滴，从而可以以高生产率和优异的再现性制造具有窄粒度变化的粒状硅晶体。
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