Method of reducing water spotting and oxide growth on a semiconductor structure

Invention Grant

US06656289B2 Method of reducing water spotting and oxide growth on a semiconductor structure 有权

Patent Title: Method of reducing water spotting and oxide growth on a semiconductor structure
Application No.: US09943844

Application Date: 2001-08-30
Publication No.: US06656289B2

Publication Date: 2003-12-02
Inventor: Donald L. Yates
Applicant: Donald L. Yates
Main IPC: B08B700
IPC: B08B700

Abstract:

The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel.

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