发明授权
- 专利标题: Plasma chamber conditioning
- 专利标题(中): 等离子室调节
-
申请号: US10133931申请日: 2002-04-26
-
公开(公告)号: US06656848B1公开(公告)日: 2003-12-02
- 发明人: John Scanlan , Kevin O'Leary , Barry Coonan
- 申请人: John Scanlan , Kevin O'Leary , Barry Coonan
- 优先权: IE2002/0141 20020222
- 主分类号: H01L21302
- IPC分类号: H01L21302
摘要:
A method for determining the optimum number of conditioning wafers to be run following a wet clean of the walls of an RF plasma chamber 1 is based on an electrical precursor signal. Polymer build up on a plasma chamber wall during normal chamber conditioning is monitored by observing components of the fundamental RF signal. After a pre-determined number of wafers has been run, a predictive model is used to determine the total number of wafers needed to complete the conditioning cycle.
信息查询