MOS transistors having dual gates and self-aligned interconnect contact windows

发明授权

US06657263B2 MOS transistors having dual gates and self-aligned interconnect contact windows 有权

标题翻译：具有双栅极和自对准互连接触窗口的MOS晶体管

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专利标题： MOS transistors having dual gates and self-aligned interconnect contact windows
专利标题（中）： 具有双栅极和自对准互连接触窗口的MOS晶体管
申请号： US09896205

申请日： 2001-06-28
公开(公告)号： US06657263B2

公开(公告)日： 2003-12-02
发明人: Cheng-Tsung Ni
申请人： Cheng-Tsung Ni
优先权： TW88104775 19990326
主分类号： H01L2976
IPC分类号： H01L2976

MOS transistors having dual gates and self-aligned interconnect contact windows

摘要：

A method of fabricating an IC device on a substrate comprising MOS transistors and other IC components. Each of the transistors of the IC device comprises a raised source electrode, a raised drain electrode, dual gate electrodes and self-aligned interconnect contact windows, and is connected to other transistors and other IC components through interconnects formed on top of such self-aligned contact windows.

摘要（中）：

一种在包括MOS晶体管和其它IC组件的衬底上制造IC器件的方法。 IC器件的每个晶体管包括升高的源电极，升高的漏电极，双栅极电极和自对准的互连接触窗口，并且通过在这样的自对准顶部上形成的互连而连接到其它晶体管和其它IC部件联系窗口。

公开/授权文献

US20010049165A1 MOS transistors having dual gates and self-aligned interconnect contact windows 公开/授权日：2001-12-06

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