- Patent Title: Reducing relative stress between HDP layer and passivation layer
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Application No.: US10170234Application Date: 2002-06-13
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Publication No.: US06657283B2Publication Date: 2003-12-02
- Inventor: Ellis Lee , Ing-Tang Chen , Horng-Bor Lu
- Applicant: Ellis Lee , Ing-Tang Chen , Horng-Bor Lu
- Main IPC: H01L2358
- IPC: H01L2358

Abstract:
Structures for reducing relative stress between HDP layer and passivation layer are proposed by the invention, where the HDP layer is formed by high density plasma and the passivation layer is a conventional passivation layer. The invention provides some structures that can be divided into two categories: one, a low stress passivation layer is directly formed on a HDP layer; another, a low stress layer is formed between passivation layer and HDP layer to reduce relative layer that between any two adjacent layers. Therefore, it is crystal-clear that possible structures of the invention comprise following varieties: First, a low stress passivation layer is located between a passivation layer and a HDP layer. Second, a lower stress passivation layer directly locates on a HDP layer. Third, a low stress layer is formed between a passivation layer and a HDP layer.
Public/Granted literature
- US20020195688A1 Reducing relative stress between HDP layer and passivation layer Public/Granted day:2002-12-26
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