发明授权
US06657300B2 Formation of ohmic contacts in III-nitride light emitting devices
有权
在III族氮化物发光器件中形成欧姆接触
- 专利标题： Formation of ohmic contacts in III-nitride light emitting devices
- 专利标题（中）： 在III族氮化物发光器件中形成欧姆接触
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申请号： US09755935申请日： 2001-01-05
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公开(公告)号： US06657300B2公开(公告)日： 2003-12-02
- 发明人: Werner K. Goetz , Michael D. Camras , Changhua Chen , Gina L. Christenson , R. Scott Kern , Chihping Kuo , Paul Scott Martin , Daniel A. Steigerwald
- 申请人： Werner K. Goetz , Michael D. Camras , Changhua Chen , Gina L. Christenson , R. Scott Kern , Chihping Kuo , Paul Scott Martin , Daniel A. Steigerwald
- 主分类号： H01L2348
- IPC分类号： H01L2348
摘要：
P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 &OHgr;cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.