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1.发明授权公开(公告)号：US07547908B2
公开(公告)日：2009-06-16
申请号：US11615834
申请日：2006-12-22
IPC分类号： H01L29/06
CPC分类号： H01L33/007 , H01L31/184
摘要： In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-plane corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane−abulk)|/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.
摘要翻译： 在III族氮化物发光器件中，包括发光层的器件层在设计成减小器件中特别是在发光层中的应变的模板上生长。 降低发光器件中的应变可以提高器件的性能。 模板可以在常规生长模板可获得的晶格常数的范围内扩展发光层中的晶格常数。 应变定义如下：给定层具有对应于与该层相同组成的自由材料的晶格常数的块状晶格常数吸收和对应于该层的晶格常数的面内晶格常数ain-平面 如在结构中生长。 一层中的应变量为|（ain-plane-abulk）| / abulk。 在一些实施方案中，发光层中的应变小于1％。
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公开(公告)号：US5977612A
公开(公告)日：1999-11-02
申请号：US770403
申请日：1996-12-20
申请人： David P. Bour , Fernando A. Ponce , G. A. Neville Connell , Ross D. Bringans , Noble M. Johnson , Werner K. Goetz , Linda T. Romano
发明人： David P. Bour , Fernando A. Ponce , G. A. Neville Connell , Ross D. Bringans , Noble M. Johnson , Werner K. Goetz , Linda T. Romano
CPC分类号： H01L33/32 , B82Y20/00 , H01L29/201 , H01L33/16 , H01S5/34333
摘要： The present invention relates to electronic devices formed in crystallites of III-V nitride materials. Specifically, the present invention simplifies the processing technology required for the fabrication of high-performance electronic devices in III-V nitride materials.
摘要翻译： 本发明涉及以III-V族氮化物材料微晶形成的电子器件。 具体地说，本发明简化了在III-V族氮化物材料中制造高性能电子器件所需的加工技术。
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3.发明授权公开(公告)号：US07951693B2
公开(公告)日：2011-05-31
申请号：US11615808
申请日：2006-12-22
IPC分类号： H01L21/20
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0262
摘要： In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-plane corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane−abulk)|/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.
摘要翻译： 在III族氮化物发光器件中，包括发光层的器件层在设计成减小器件中特别是在发光层中的应变的模板上生长。 降低发光器件中的应变可以提高器件的性能。 模板可以在常规生长模板可获得的晶格常数的范围内扩展发光层中的晶格常数。 应变定义如下：给定层具有对应于与该层相同组成的自由材料的晶格常数的块状晶格常数吸收和对应于该层的晶格常数的面内晶格常数ain-平面 如在结构中生长。 一层中的应变量为|（ain-plane-abulk）| / abulk。 在一些实施方案中，发光层中的应变小于1％。
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公开(公告)号：US06955933B2
公开(公告)日：2005-10-18
申请号：US09912589
申请日：2001-07-24
申请人： David P. Bour , Nathan F. Gardner , Werner K. Goetz , Stephen A. Stockman , Tetsuya Takeuchi , Ghulam Hasnain , Christopher P. Kocot , Mark R. Hueschen
发明人： David P. Bour , Nathan F. Gardner , Werner K. Goetz , Stephen A. Stockman , Tetsuya Takeuchi , Ghulam Hasnain , Christopher P. Kocot , Mark R. Hueschen
摘要： A light emitting device in accordance with an embodiment of the present invention includes a first semiconductor layer of a first conductivity type having a first surface, and an active region formed overlying the first semiconductor layer. The active region includes a second semiconductor layer which is either a quantum well layer or a barrier layer. The second semiconductor layer is formed from a semiconductor alloy having a composition graded in a direction substantially perpendicular to the first surface of the first semiconductor layer. The light emitting device also includes a third semiconductor layer of a second conductivity type formed overlying the active region.
摘要翻译： 根据本发明的实施例的发光器件包括具有第一表面的第一导电类型的第一半导体层和形成在第一半导体层上的有源区。 有源区包括作为量子阱层或阻挡层的第二半导体层。 第二半导体层由具有在基本上垂直于第一半导体层的第一表面的方向分级的成分的半导体合金形成。 发光器件还包括形成在有源区上的第二导电类型的第三半导体层。
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公开(公告)号：US06657300B2
公开(公告)日：2003-12-02
申请号：US09755935
申请日：2001-01-05
申请人： Werner K. Goetz , Michael D. Camras , Changhua Chen , Gina L. Christenson , R. Scott Kern , Chihping Kuo , Paul Scott Martin , Daniel A. Steigerwald
发明人： Werner K. Goetz , Michael D. Camras , Changhua Chen , Gina L. Christenson , R. Scott Kern , Chihping Kuo , Paul Scott Martin , Daniel A. Steigerwald
IPC分类号： H01L2348
CPC分类号： H01L33/40 , H01L33/32 , H01L2924/0002 , H01S5/0421 , H01S5/0425 , H01S5/32341 , H01L2924/00
摘要： P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 &OHgr;cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.
摘要翻译： GaN基发光器件的P型层优化用于形成与金属的欧姆接触。 在第一实施例中，在p型导电层和金属触点之间形成电阻率大于或等于约7Ωgm的p型GaN过渡层。 在第二实施例中，p型过渡层是任何III-V半导体。 在第三实施例中，p型过渡层是超晶格。 在第四实施例中，形成具有不同组成和不同浓度的掺杂剂的单一p型层。
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6.发明申请公开(公告)号：US20080149961A1
公开(公告)日：2008-06-26
申请号：US11615834
申请日：2006-12-22
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L31/184
摘要： In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-plane corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane−abulk)/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.
摘要翻译： 在III族氮化物发光器件中，包括发光层的器件层在设计成减小器件中特别是在发光层中的应变的模板上生长。 降低发光器件中的应变可以提高器件的性能。 模板可以在常规生长模板可获得的晶格常数的范围内扩展发光层中的晶格常数。 应变定义如下：给定层具有对应于与该层相同组成的自由材料的晶格常数和体内晶格常数a的体晶格常数a 对应于在该结构中生长的该层的晶格常数。 一层中的应变量是|（一个平面内的）本体体积。 在一些实施方案中，发光层中的应变小于1％。
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公开(公告)号：US07345323B2
公开(公告)日：2008-03-18
申请号：US11095854
申请日：2005-03-30
申请人： Werner K. Goetz , Michael D. Camras , Xiaoping Chen, legal representative , Gina L. Christenson , R. Scott Kern , Chihping Kuo , Paul Scott Martin , Daniel A. Steigerwald
发明人： Changhua Chen
IPC分类号： H02L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L2924/0002 , H01S5/0421 , H01S5/0425 , H01S5/32341 , H01L2924/00
摘要： P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 Ω cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.
摘要翻译： GaN基发光器件的P型层优化用于形成与金属的欧姆接触。 在第一实施例中，在p型导电层和金属接触之间形成电阻率大于或等于约7Ωcm的p型GaN过渡层。 在第二实施例中，p型过渡层是任何III-V半导体。 在第三实施例中，p型过渡层是超晶格。 在第四实施例中，形成具有不同组成和不同浓度的掺杂剂的单一p型层。
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公开(公告)号：US06576932B2
公开(公告)日：2003-06-10
申请号：US09797770
申请日：2001-03-01
申请人： Reena Khare , Werner K. Goetz , Michael D. Camras
发明人： Reena Khare , Werner K. Goetz , Michael D. Camras
IPC分类号： H01L3300
CPC分类号： H01L21/0254 , H01L21/0237 , H01L21/02433 , H01L21/02458 , H01L33/007 , H01L33/16
摘要： LEDs employing a III-Nitride light emitting active region deposited on a base layer above a substrate show improved optical properties with the base layer grown on an intentionally misaligned substrate with a thickness greater than 3.5 &mgr;m. Improved brightness, improved quantum efficiency, and a reduction in the current at which maximum quantum efficiency occurs are among the improved optical properties resulting from use of a misaligned substrate and a thick base layer. Illustrative examples are given of misalignment angles in the range from 0.05° to 0.50°, and base layers in the range from 6.5 to 9.5 &mgr;m although larger values of both misalignment angle and base layer thickness can be used. In some cases, the use of thicker base layers provides sufficient structural support to allow the substrate to be removed from the device entirely.
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公开(公告)号：US20110121358A1
公开(公告)日：2011-05-26
申请号：US13017074
申请日：2011-01-31
IPC分类号： H01L33/32
CPC分类号： H01L33/305 , H01L33/007 , H01L33/0079 , H01L33/382
摘要： A semiconductor structure includes a light emitting region, a p-type region disposed on a first side of the light emitting region, and an n-type region disposed on a second side of the light emitting region. At least 10% of a thickness of the semiconductor structure on the first side of the light emitting region comprises indium. Some examples of such a semiconductor light emitting device may be formed by growing an n-type region, growing a p-type region, and growing a light emitting layer disposed between the n-type region and the p-type region. The difference in temperature between the growth temperature of a part of the n-type region and the growth temperature of a part of the p-type region is at least 140° C.
摘要翻译： 半导体结构包括发光区域，设置在发光区域的第一侧上的p型区域和设置在发光区域的第二侧上的n型区域。 发光区域的第一侧的半导体结构的厚度的至少10％包括铟。 可以通过生长n型区域，生长p型区域以及生长设置在n型区域和p型区域之间的发光层来形成这种半导体发光器件的一些示例。 n型区域的一部分的生长温度与p型区域的一部分的生长温度之间的温度差为至少140℃。
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公开(公告)号：US07906357B2
公开(公告)日：2011-03-15
申请号：US11383456
申请日：2006-05-15
IPC分类号： H01L21/00
CPC分类号： H01L33/305 , H01L33/007 , H01L33/0079 , H01L33/382
摘要： A semiconductor structure includes a light emitting region, a p-type region disposed on a first side of the light emitting region, and an n-type region disposed on a second side of the light emitting region. At least 10% of a thickness of the semiconductor structure on the first side of the light emitting region comprises indium. Some examples of such a semiconductor light emitting device may be formed by growing an n-type region, growing a p-type region, and growing a light emitting layer disposed between the n-type region and the p-type region. The difference in temperature between the growth temperature of a part of the n-type region and the growth temperature of a part of the p-type region is at least 140° C.
摘要翻译： 半导体结构包括发光区域，设置在发光区域的第一侧上的p型区域和设置在发光区域的第二侧上的n型区域。 发光区域的第一侧的半导体结构的厚度的至少10％包括铟。 可以通过生长n型区域，生长p型区域以及生长设置在n型区域和p型区域之间的发光层来形成这种半导体发光器件的一些示例。 n型区域的一部分的生长温度与p型区域的一部分的生长温度之间的温度差为至少140℃。
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